PHP101NQ03LT, PHP101NQ04T, PHP1025 Selling Leads, Datasheet
MFG:NXP Package Cooled:SOT78/TO-220AB D/C:TO
PHP101NQ03LT, PHP101NQ04T, PHP1025 Datasheet download
Part Number: PHP101NQ03LT
MFG: NXP
Package Cooled: SOT78/TO-220AB
D/C: TO
PHP101NQ03LT, PHP101NQ04T, PHP1025
- Table of contents:
Info of PHP101NQ03LT
Info of PHP101NQ04T
Info of PHP1025
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About PHP101NQ03LT
PDF/DataSheet Download
Datasheet: PHP101NQ03LT
File Size: 285725 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHP101NQ04T
PDF/DataSheet Download
Datasheet: PHP101NQ04T
File Size: 97268 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
About PHP1025
PDF/DataSheet Download
Datasheet: PHP1025
File Size: 53123 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PHP101NQ04T General Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology.
PHP101NQ04T Maximum Ratings
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | 25 Tj 175 | - | 40 | V |
| VDGR | drain-gate voltage (DC) | 25 Tj 175 ; RGS = 20 k | - | 40 | V |
| VGS | gate-source voltage (DC) | - | ±20 | V | |
| ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; Figure 2 and 3 | - | 75 | A |
| Tmb = 100 ; VGS = 10 V; Figure 2 | - | 71 | A | ||
| IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 240 | A |
| Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 157 | W |
| Tstg | storage temperature | -55 | +175 | ||
| Tj | junction temperature | -55 | +175 | ||
| Source-drain diode | |||||
| IS | source (diode forward) current (DC) Tmb = 25 | - | 75 | A | |
| ISM | peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s | - | 240 | A | |
| Avalanche ruggedness | |||||
| EDS(AL)S | non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 45 A; tp = 0.17 ms; VDD 55 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 |
- | 200 | mJ |
PHP101NQ04T Features
·Standard level threshold
·Very low on-state resistance.
·Very low on-state resistance.
PHP101NQ04T Typical Application
·Motors, lamps, solenoids
·DC-to-DC converters
·Uninterruptible power supplies
·General industrial applications.
·DC-to-DC converters
·Uninterruptible power supplies
·General industrial applications.
PHP101NQ04T Connection Diagram
PHP1025 General Description
P-channel enhancement mode MOS transistor in an 8-pin SOT96-1 (SO8) SMD plastic package.
PHP1025 Maximum Ratings
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | drain-source voltage (DC) | - | -12 | V | |
| VGS | gate-source voltage (DC) | open drain | - | ±8 | V |
| ID | drain current (DC) | Ts = 80 ; note 1 | - | -10 | A |
| IDM | peak drain current | note 2 | - | -40 | A |
| Ptot | total power dissipation | Ts = 80 ; | - | 4 | W |
| Tamb = 25 ; note 3 | - | 2.78 | W | ||
| Tamb = 25 ; note 4 | - | 1.16 | W | ||
| Tstg | storage temperature | -55 | +150 | ||
| Tj | operating junction temperature | -55 | +150 | ||
| Source-drain diode | |||||
| IS | source current (DC) | Ts = 80 | - | -3 | A |
| ISM | peak source current | note 2 | - | -12 | A |
PHP1025 Features
· Very low RDSon at low threshold
· High-speed switching
· No secondary breakdown
· Direct interface to C-MOS, TTL, etc.
· High-speed switching
· No secondary breakdown
· Direct interface to C-MOS, TTL, etc.
PHP1025 Typical Application
· Power management
· DC-DC converters
· General purpose switch.
· DC-DC converters
· General purpose switch.
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