PHP11N06LT, PHP11N50E, PHP125 Selling Leads, Datasheet
MFG:PH Package Cooled:09+ D/C:TO
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PHP11N06LT, PHP11N50E, PHP125 Datasheet download
Part Number: PHP11N06LT
MFG: PH
Package Cooled: 09+
D/C: TO
MFG:PH Package Cooled:09+ D/C:TO
PHP11N06LT, PHP11N50E, PHP125 Datasheet download
MFG: PH
Package Cooled: 09+
D/C: TO
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PDF/DataSheet Download
Datasheet: PHP11N06LT
File Size: 117683 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHP11N50E
File Size: 42621 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHP125
File Size: 108134 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS VDGR VGS VGSM ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Pulsed gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 kW Tj 150 Tmb = 25 Tmb = 100 Tmb = 25 Tmb = 25 |
- - - - - - - - - 55 |
55 55 ± 15 ± 20 10.3 7.3 41 33 175 |
V V V V A A A W |
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
500 500 ± 30 10.4 6.6 42 156 150 |
V V V A A A W |
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | drain-source voltage (DC) | - | -30 | V | |
VGS | gate-source voltage (DC) | open drain | - | ±20 | V |
ID | drain current (DC) | Ts = 80 ; note 1 | - | -2.5 | A |
IDM | peak drain current | note 2 | - | -10 | A |
Ptot | total power dissipation | Ts = 80 ; | - | 2.8 | W |
Tamb = 25 ; note 3 | - | 2.4 | W | ||
Tamb = 25 ; note 4 | - | 1.1 | W | ||
Tstg | storage temperature | -55 | +150 | ||
Tj | operating junction temperature | -55 | +150 | ||
Source-drain diode | |||||
IS | source current (DC) | Ts = 80 | - | -2 | A |
ISM | peak source current | note 2 | - | -8 | A |