PHP11N06LT, PHP11N50E, PHP125 Selling Leads, Datasheet
MFG:PH Package Cooled:09+ D/C:TO
PHP11N06LT, PHP11N50E, PHP125 Datasheet download
Part Number: PHP11N06LT
MFG: PH
Package Cooled: 09+
D/C: TO
MFG:PH Package Cooled:09+ D/C:TO
PHP11N06LT, PHP11N50E, PHP125 Datasheet download
MFG: PH
Package Cooled: 09+
D/C: TO
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: PHP11N06LT
File Size: 117683 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHP11N50E
File Size: 42621 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHP125
File Size: 108134 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS VDGR VGS VGSM ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Pulsed gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 kW Tj 150 Tmb = 25 Tmb = 100 Tmb = 25 Tmb = 25 |
- - - - - - - - - 55 |
55 55 ± 15 ± 20 10.3 7.3 41 33 175 |
V V V V A A A W |
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
500 500 ± 30 10.4 6.6 42 156 150 |
V V V A A A W |
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | drain-source voltage (DC) | - | -30 | V | |
VGS | gate-source voltage (DC) | open drain | - | ±20 | V |
ID | drain current (DC) | Ts = 80 ; note 1 | - | -2.5 | A |
IDM | peak drain current | note 2 | - | -10 | A |
Ptot | total power dissipation | Ts = 80 ; | - | 2.8 | W |
Tamb = 25 ; note 3 | - | 2.4 | W | ||
Tamb = 25 ; note 4 | - | 1.1 | W | ||
Tstg | storage temperature | -55 | +150 | ||
Tj | operating junction temperature | -55 | +150 | ||
Source-drain diode | |||||
IS | source current (DC) | Ts = 80 | - | -2 | A |
ISM | peak source current | note 2 | - | -8 | A |