PHP1035, PHP108NQ03LT, PHP109 Selling Leads, Datasheet
MFG:NXP Package Cooled:SOP8 D/C:N/A
PHP1035, PHP108NQ03LT, PHP109 Datasheet download
Part Number: PHP1035
MFG: NXP
Package Cooled: SOP8
D/C: N/A
MFG:NXP Package Cooled:SOP8 D/C:N/A
PHP1035, PHP108NQ03LT, PHP109 Datasheet download
MFG: NXP
Package Cooled: SOP8
D/C: N/A
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PDF/DataSheet Download
Datasheet: PHP1035
File Size: 53034 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHP108NQ03LT
File Size: 275920 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHP109
File Size: 103427 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | drain-source voltage (DC) | - | -30 | V | |
VGS | gate-source voltage (DC) | open drain | - | ±20 | V |
ID | drain current (DC) | Ts = 80 ; note 1 | - | -8 | A |
IDM | peak drain current | note 2 | - | -32 | A |
Ptot | total power dissipation | Ts = 80 ; | - | 4 | W |
Tamb = 25 ; note 3 | - | 2.78 | W | ||
Tamb = 25 ; note 4 | - | 1.16 | W | ||
Tstg | storage temperature | -55 | +150 | ||
Tj | operating junction temperature | -55 | +150 | ||
Source-drain diode | |||||
IS | source current (DC) | Ts = 80 | - | -3 | A |
ISM | peak source current | note 2 | - | -12 | A |
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | 25 Tj 175 | - | 25 | V |
VDGR | drain-gate voltage (DC) | 25 Tj 175 ; RGS = 20 k | - | 25 | V |
ID | drain current (DC) | Tmb = 25 ; VGS = 5 V; Figure 2 and 3 | - | 75 | A |
Tmb = 100 ; VGS = 5 V; Figure 2 and 3 | - | 60 | A | ||
VGS | gate-source voltage | - | ±20 | V | |
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 108 | A |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 180 | W |
Tstg | storage temperature | -55 | +175 | ||
Tj | junction temperature | -55 | +175 | ||
Source-drain diode | |||||
IS | source (diode forward) current (DC) Tmb = 25 | - | 75 | A | |
ISM | peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s | - | 108 | A | |
Avalanche ruggedness | |||||
EDS(AL)S | non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 43A; tp = 0.25 ms; VDD 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 |
- | 180 | mJ |
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | drain-source voltage (DC) | - | -30 | V | |
VGS | gate-source voltage (DC) | open drain | - | ±20 | V |
ID | drain current (DC) | Ts = 80 ; note 1 | - | -5 | A |
IDM | peak drain current | note 2 | - | -20 | A |
Ptot | total power dissipation | Ts = 80 ; | - | 4 | W |
Tamb = 25 ; note 3 | - | 2.7 | W | ||
Tamb = 25 ; note 4 | - | 1.15 | W | ||
Tstg | storage temperature | -55 | +150 | ||
Tj | operating junction temperature | -55 | +150 | ||
Source-drain diode | |||||
IS | source current (DC) | Ts = 80 | - | -3 | A |
ISM | peak source current | note 2 | - | -12 | A |