PHN1018, PHN103, PHN103S Selling Leads, Datasheet
MFG:NXP Package Cooled:SOP8 D/C:08+
PHN1018, PHN103, PHN103S Datasheet download
Part Number: PHN1018
MFG: NXP
Package Cooled: SOP8
D/C: 08+
MFG:NXP Package Cooled:SOP8 D/C:08+
PHN1018, PHN103, PHN103S Datasheet download
MFG: NXP
Package Cooled: SOP8
D/C: 08+
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PDF/DataSheet Download
Datasheet: PHN1018
File Size: 90982 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: PHN103
File Size: 78505 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHN103S
File Size: 97235 KB
Manufacturer:
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N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using 'trench'technology.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | Drain-source voltage | Tj = 25 to 150 | - | 25 | V |
VDGR | Drain-gate voltage | Tj = 25 to 150; RGS = 20 k | - | 25 | V |
VGS | Gate-source voltage(DC) | - | ± 15 | V | |
VGSM | Gate-source voltage (pulse peak value) | - | ± 20 | V | |
ID | Drain current (tp 10 s) | Ta = 25 Ta = 70 | - | 9.6 7.7 | A A |
IDM | Drain current (pulse peak value) | Ta = 25 | - | 38 | A |
Ptot | Total power dissipation | Ta = 25 Ta = 70 | - | 2.5 1.6 | W W |
Tj, Tstg | Operating junction and storage temperature | - | -55 | 150 |
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | drain-source voltage (DC) | - | 30 | V | |
VGS | gate-source voltage (DC) | - | ±20 | V | |
ID | drain current (DC) | Ts = 80 °C; note 1 | - | 8.5 | A |
IDM | peak drain current | note 2 | - | 35 | A |
Ptot | total power dissipation | Ts = 80 ; | - | 4 | W |
Tamb = 25 ; note 3 | - | 2.7 | W | ||
Tamb = 25 ; note 4 | - | 1.15 | W | ||
Tstg | storage temperature | -65 | +150 | ||
Tj | operating junction temperature | -65 | 150 | ||
Source-drain diode | |||||
IS | source current (DC) | Ts = 80 | - | 5 | A |
ISM | peak source current | note 2 | - | 20 | A |
N-channel enhancement mode field-effect transistor and schottky diode in the same plastic envelopeThe MOSFET uses 'trench' technology to achieve low on-state resistance.