Features: • 'Trench' technology • Low on-state resistance• Fast switching • High thermal cycling performance• Low-profile surface mount package• Logic level compatibleApplicationThese products are not designed for use in life support appliances, devices or syste...
PHN1011: Features: • 'Trench' technology • Low on-state resistance• Fast switching • High thermal cycling performance• Low-profile surface mount package• Logic level compa...
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These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | Drain-source voltage | Tj = 25 to 150 | - | 25 | V |
VDGR | Drain-gate voltage | Tj = 25 to 150; RGS = 20 k | - | 25 | V |
VGS | Gate-source voltage(DC) | - | ± 15 | V | |
VGSM | Gate-source voltage (pulse peak value) | - | ± 20 | V | |
ID | Drain current (tp 10 s) | Ta = 25 Ta = 70 | - | 11 9 | A A |
IDM | Drain current (pulse peak value) | Ta = 25 | - | 44 | A |
Ptot | Total power dissipation | Ta = 25 Ta = 70 | - | 2.5 1.6 | W W |
Tj, Tstg | Operating junction and storage temperature | - | -55 | 150 |
PHN1011 N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using 'trench'technology. The combination of very low on-state resistance and low switching losses make this device the optimum choice in high speed computer motherboard d.c. to d.c. converters.
The PHN1011 is supplied in the SOT96-1 (SO8) surface mounting package