Features: • 'Trench' technology • Low on-state resistance• Fast switching • Low-profile surface mount package • Logic level compatibleApplication• High frequency computer motherboard d.c. to d.c. convertersThe PHN1015 is supplied in the SOT96-1 (SO8) surface mou...
PHN1015: Features: • 'Trench' technology • Low on-state resistance• Fast switching • Low-profile surface mount package • Logic level compatibleApplication• High frequency ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
• 'Trench' technology
• Low on-state resistance
• Fast switching
• Low-profile surface mount
package
• Logic level compatible
• High frequency computer motherboard d.c. to d.c. converters
The PHN1015 is supplied in the SOT96-1 (SO8) surface mounting package.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | Drain-source voltage | Tj = 25 to 150 | - | 25 | V |
VDGR | Drain-gate voltage | Tj = 25 to 150; RGS = 20 k | - | 25 | V |
VGS | Gate-source voltage(DC) | - | ± 15 | V | |
VGSM | Gate-source voltage (pulse peak value) | - | ± 20 | V | |
ID | Drain current (tp 10 s) | Ta = 25 Ta = 70 °C | - | 10 8 | A A |
IDM | Drain current (pulse peak value) | Ta = 25 | - | 40 | A |
Ptot | Total power dissipation | Ta = 25 | - | 2.5 1.6 | W W |
Tstg, Tj | Storage & operating temperature | - | -55 | 150 |
PHN1015, N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using 'trench'technology.