PHN1013, PHN1013118 98, PHN1015 Selling Leads, Datasheet
MFG:NXP Package Cooled:SO8 D/C:98+
PHN1013, PHN1013118 98, PHN1015 Datasheet download
Part Number: PHN1013
MFG: NXP
Package Cooled: SO8
D/C: 98+
MFG:NXP Package Cooled:SO8 D/C:98+
PHN1013, PHN1013118 98, PHN1015 Datasheet download
MFG: NXP
Package Cooled: SO8
D/C: 98+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: PHN1013
File Size: 61981 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHN1011
File Size: 118384 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: PHN1015
File Size: 97613 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
N-channel enhancement mode logic level field-effect power transistor using 'trench' technology, in an 8-pin plastic SOT96-1 (SO8) package.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | Continuous drain-source voltage | - | 30 | V | |
VDG | Drain-gate voltage | RGS = 20 k | - | 30 | V |
VGS | Gate-source voltage | - | ± 20 | V | |
ID | drain current (DC) | Tamb = 25 ; tp 10 s Tamb = 70 ; tp 10 s | - | 10 8 | A A |
IDM | peak drain current | Tamb = 25 | - | 50 | A |
Ptot | total power dissipation | Tamb = 25 Tamb = 70 | - | 2.5 1.6 | W W |
Tstg | storage temperature | -55 | +150 | ||
Tj | operating junction temperature | -55 | +150 |
N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using 'trench'technology.
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDS | Drain-source voltage | Tj = 25 to 150 | - | 25 | V |
VDGR | Drain-gate voltage | Tj = 25 to 150; RGS = 20 k | - | 25 | V |
VGS | Gate-source voltage(DC) | - | ± 15 | V | |
VGSM | Gate-source voltage (pulse peak value) | - | ± 20 | V | |
ID | Drain current (tp 10 s) | Ta = 25 Ta = 70 °C | - | 10 8 | A A |
IDM | Drain current (pulse peak value) | Ta = 25 | - | 40 | A |
Ptot | Total power dissipation | Ta = 25 | - | 2.5 1.6 | W W |
Tstg, Tj | Storage & operating temperature | - | -55 | 150 |
• 'Trench' technology
• Low on-state resistance
• Fast switching
• Low-profile surface mount
package
• Logic level compatible
• High frequency computer motherboard d.c. to d.c. converters
The PHN1015 is supplied in the SOT96-1 (SO8) surface mounting package.