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N-channel enhancement mode logic level field-effect power transistor in a surface mounting plastic package using 'trench'technology. The combination of very low on-state resistance and low switching losses make this device the optimum choice in high speed computer motherboard d.c. to d.c. converters.
The PHN1011 is supplied in the SOT96-1 (SO8) surface mounting package
PHN1011 Maximum Ratings
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
Drain-source voltage
Tj = 25 to 150
-
25
V
VDGR
Drain-gate voltage
Tj = 25 to 150; RGS = 20 k
-
25
V
VGS
Gate-source voltage(DC)
-
± 15
V
VGSM
Gate-source voltage (pulse peak value)
-
± 20
V
ID
Drain current (tp 10 s)
Ta = 25 Ta = 70
-
11 9
A A
IDM
Drain current (pulse peak value)
Ta = 25
-
44
A
Ptot
Total power dissipation
Ta = 25 Ta = 70
-
2.5 1.6
W W
Tj, Tstg
Operating junction and storage temperature
-
-55
150
PHN1011 Features
• 'Trench' technology • Low on-state resistance • Fast switching • High thermal cycling performance • Low-profile surface mount package • Logic level compatible
PHN1011 Typical Application
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.