P1.5KE8.2CA, P1000, P100-00 Selling Leads, Datasheet
MFG:OMRON Package Cooled:2007+ D/C:3000
P1.5KE8.2CA, P1000, P100-00 Datasheet download
Part Number: P1.5KE8.2CA
MFG: OMRON
Package Cooled: 2007+
D/C: 3000
MFG:OMRON Package Cooled:2007+ D/C:3000
P1.5KE8.2CA, P1000, P100-00 Datasheet download
MFG: OMRON
Package Cooled: 2007+
D/C: 3000
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Datasheet: P1000A
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Manufacturer: DIOTEC [Diotec Semiconductor]
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Datasheet: P10/032B
File Size: 73904 KB
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Mimix Broadband's two stage 17.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm. The device also includes Lange couplers to achieve good input/output return loss and an on-chip temperature compensated output power detector. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Supply Voltage (Vd) |
+6.0 VDC |
Supply Current (Id) |
700 mA |
Gate Bias Voltage (Vg) |
+0.3 VDC |
Input Power (Pin) |
+9.0 dBm |
Storage Temperature (Tstg) |
-65 to +165 |
Operating Temperature (Ta) |
-55 to MTTF Table4 |
Channel Temperature (Tch) |
-55 to MTTF Table4 |
(4) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.