Features: ·High Linearity Output Amplifier·Balanced Design Provides Good Input/Output Match·On-Chip Temperature Compensated·Output Power Detector·19.0 dB Small Signal Gain·+36.0 dBm Third Order Intercept (OIP3)·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 Met...
P1000: Features: ·High Linearity Output Amplifier·Balanced Design Provides Good Input/Output Match·On-Chip Temperature Compensated·Output Power Detector·19.0 dB Small Signal Gain·+36.0 dBm Third Order Inte...
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Supply Voltage (Vd) |
+6.0 VDC |
Supply Current (Id) |
700 mA |
Gate Bias Voltage (Vg) |
+0.3 VDC |
Input Power (Pin) |
+9.0 dBm |
Storage Temperature (Tstg) |
-65 to +165 |
Operating Temperature (Ta) |
-55 to MTTF Table4 |
Channel Temperature (Tch) |
-55 to MTTF Table4 |
(4) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Mimix Broadband's two stage 17.0-24.0 GHz GaAs MMIC power amplifier P1000 is optimized for linear operation with a third order intercept point of +36.0 dBm. The device also includes Lange couplers to achieve good input/output return loss and an on-chip temperature compensated output power detector. This MMIC of P1000 uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This P1000 is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.