Features: ·High Linearity Wideband Amplifier·On-Chip Temperature Compensated Output Power Detector·Balanced Design Provides Good Input/Output Match·11.0 dB Small Signal Gain·+31.0 dBm Third Order Intercept (OIP3)·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 M...
P1001: Features: ·High Linearity Wideband Amplifier·On-Chip Temperature Compensated Output Power Detector·Balanced Design Provides Good Input/Output Match·11.0 dB Small Signal Gain·+31.0 dBm Third Order In...
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Supply Voltage (Vd) | +6.0 Vdc |
Supply Current (Id) | 700 mA |
Gate Bias Voltage (Vg) | +0.3 Vdc |
Input Power (Pin) | +14.0 dBm |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to MTTF Table4 |
Channel Temperature (Tch) | MTTF Table4 |
Mimix Broadband's two stage 26.0-40.0 GHz GaAs MMIC power amplifier P1001 is optimized for linear operation with a third
order intercept point of +31.0 dBm. The device also includes Lange couplers to achieve good input/output return loss and an on-chip temperature compensated output power detector. This MMIC of P1001 uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This P1001 is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.