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P1006-FA

Features: ·X-Band 10W Power Amplifier·Flange Package·21.5 dB Large Signal Gain·+40.5 dBm Saturated Output Power·37% Power Added Efficiency·100% On-Wafer RF, DC and Output Power TestingSpecifications Supply Voltage (Vd) +9.0 VDC Supply Current (Id1,2,3) 4.5 A Gate Bias Voltage (Vg) +0...

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P1006-FA: Features: ·X-Band 10W Power Amplifier·Flange Package·21.5 dB Large Signal Gain·+40.5 dBm Saturated Output Power·37% Power Added Efficiency·100% On-Wafer RF, DC and Output Power TestingSpecifications...

P1006-FA Data Sheet

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Part Number:
P1006-FA
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

·X-Band 10W Power Amplifier
·Flange Package
·21.5 dB Large Signal Gain
·+40.5 dBm Saturated Output Power
·37% Power Added Efficiency
·100% On-Wafer RF, DC and Output Power Testing


Specifications

</TABL
Supply Voltage (Vd) +9.0 VDC
Supply Current (Id1,2,3) 4.5 A
Gate Bias Voltage (Vg) +0.0 VDC
Input Power (Pin) TBD
Storage Temperature (Tstg) -65 to +165 OC
Operating Temperature (Ta) -55 to MTTF Table 1
Junction Temperature (Tch) MTTF Table 1


(1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.




Description

Mimix Broadband's three stage 8.5-11.0 GHz GaAs packaged power amplifier P1006-FA has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. ThisP1006-FA uses Mimix Broadband's 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ensure high repeatability and uniformity. The P1006-FA comes in a 10 pin, high frequency, LCC flange package. The package has a copper composite base material and a laminated ceramic substrate. This device is well suited for radar applications.




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