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Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp 10 S)
RJA Pd ID IDM
62.5 2.0 6.9 24
°C/W W Adc Adc
Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp 10 S)
RJA Pd ID IDM
88 1.42 5.8 4.6 20
°C/W W Adc Adc Adc
Thermal Resistance Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp 10 S)
RJA Pd ID IDM
132 0.94 4.7 3.8 14
°C/W W Adc Adc Adc
1. Mounted onto a 2, square FR4 board (1, sq. 2 oz Cu 0.06, thick single sided), t < 10 seconds. 2. Mounted onto a 2, square FR4 board (1, sq. 2 oz Cu 0.06, thick single sided), t = 10 seconds. 3. Minimum FR4 or G10 PCB, t = steady state. 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
NTQD6866R2 Features
• New Low Profile TSSOP8 Package • Ultra Low RDS(on) • Higher Efficiency Extending Battery Life • Logic Level Gate Drive • Diode Exhibits High Speed, Soft Recovery • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperatures
NTQD6866R2 Typical Application
• Power Management in Portable and BatteryPowered Products, i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones • Battery Applications • NoteBook PC