NTQD6866R2

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Configuration : Dual Dual Drain
Gate-Source Breakdown Voltage : +/- 12 V
Package / Case : TSSOP-8
Continuous Drain Current : 6.9 A
Resistance Drain-Source RDS (on) : 32 mOhms at 4.5 V


Features:

• New Low Profile TSSOP8 Package
• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperatures


Application

• Power Management in Portable and BatteryPowered Products, i.e.:
  Computers, Printers, PCMCIA Cards, Cellular and Cordless Telephones
• Battery Applications
• NoteBook PC


Pinout




Specifications

Rating	Symbol	Value	Unit
Drain−to−Source Voltage	VDSS	−20	Vdc
DraintoGate Voltage (RGS = 1.0 MW)	VDGR	20	Vdc
Gate−to−Source Voltage − Continuous	VGS	±12	Vdc
Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp  10 S)	RJA Pd ID IDM	62.5 2.0 6.9 24	°C/W W Adc Adc
Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp  10 S)	RJA Pd ID IDM	88 1.42 5.8 4.6 20	°C/W W Adc Adc Adc
Thermal Resistance Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (Tp  10 S)	RJA Pd ID IDM	132 0.94 4.7 3.8 14	°C/W W Adc Adc Adc

1. Mounted onto a 2, square FR4 board (1, sq. 2 oz Cu 0.06, thick single sided), t < 10 seconds.
2. Mounted onto a 2, square FR4 board (1, sq. 2 oz Cu 0.06, thick single sided), t = 10 seconds.
3. Minimum FR4 or G10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.