Features: • Ultra Low RDS(on)• Higher Efficiency Extending Battery Life• Logic Level Gate Drive• Miniature Dual TSSOP8 Surface Mount Package• Diode Exhibits High Speed, Soft Recovery• Micro8 Mounting Information ProvidedApplication• Power Management in Por...
NTQD6968: Features: • Ultra Low RDS(on)• Higher Efficiency Extending Battery Life• Logic Level Gate Drive• Miniature Dual TSSOP8 Surface Mount Package• Diode Exhibits High Speed,...
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Rating | Symbol | Value | Unit |
Drain−to−Source Voltage | VDSS | -20 | Vdc |
Gate−to−Source Voltage |
VGS | ±12 | Vdc |
Drain Current (Note 1) − Continuous @ TA = 25°C − Continuous @ TA = 70°C − Pulsed (Note 3) |
ID ID IDM |
−5.5 −4.5 ±30 |
Adc |
Total Power Dissipation (Note 1) @ TA = 25°C |
PD | 0.94 | W |
Drain Current (Note 2) − Continuous @ TA = 25°C − Continuous @ TA = 70°C − Pulsed (Note 3) |
ID ID IDM |
6.6 4.5 20 |
Adc |
Total Power Dissipation (Note 2) @ TA = 25°C |
PD | 1.42 | w |
Operating and Storage Temperature Range | TJ and Tstg | −55 to +150 |
°C |
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 40 V, IL = 18.4 A, L = 5.0 mH, RG = 25 ) |
EAS | 150 | mJ |
Thermal Resistance JunctiontoAmbient (Note 1) JunctiontoAmbient (Note 2) |
RJA | 132 88 |
°C/W |