Position: Home  > All Categories> Integrated Circuits (ICs) > NTQS6463

NTQS6463

Features: • New Low Profile TSSOP−8 Package• Ultra Low RDS(on)• Higher Efficiency Extending Battery Life• Logic Level Gate Drive• Diode Exhibits High Speed, Soft Recovery• Avalanche Energy Specified• IDSS and VDS(on) Specified at Elevated Temperature...

product image

NTQS6463 Picture
See larger image
SeekIC No. : 004436694 Detail

NTQS6463: Features: • New Low Profile TSSOP−8 Package• Ultra Low RDS(on)• Higher Efficiency Extending Battery Life• Logic Level Gate Drive• Diode Exhibits High Speed, Soft ...

NTQS6463 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
NTQS6463
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/23

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• New Low Profile TSSOP−8 Package
• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperatures


Application

• Power Management in Portable and Battery−Powered Products, i.e.:
   Computers, Printers, PCMCIA Cards, Cellular and Cordless
  Telephones
• Lithium Ion Battery Applications
• Note Book PC


Pinout

Connection Diagram


Specifications

Rating Symbol Value Unit
Drain−to−Source Voltage VDSS -20 V
Gate−to−Source Voltage
VGS ±12 V
Drain Current (Note 1)
− Continuous @ TA = 25°C
− Continuous @ TA = 70°C
− Pulsed (Note 3)		 ID
ID
IDM		 −5.5
−4.4
±30		 A
Total Power Dissipation (Note 1)
@ TA = 25°C		 PD 0.93
W
Drain Current (Note 2)
− Continuous @ TA = 25°C
− Continuous @ TA = 70°C
− Pulsed (Note 3)		 ID
ID
IDM		 −6.8
−5.4
30		 a
Total Power Dissipation (Note 2)
@ TA = 25°C		 PD 1.39 w
Operating and Storage Temperature Range TJ and Tstg −55 to
+150		 °C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 40 V, IL = 18.4 A,
L = 5.0 mH, RG = 25 )		 EAS 845 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient		 RJC
RJA
 134
90		 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum 3, X 3, FR−4 board, steady state.
2. Mounted on 1, square (1 oz.) board, steady state.
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Static Control, ESD, Clean Room Products
DPA5
PA800-A41
Test Equipment
TOP853
TOP2005
Kits
IT243
UVSC-110-4E1
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
View more