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NTQS6463

Features: • New Low Profile TSSOP−8 Package• Ultra Low RDS(on)• Higher Efficiency Extending Battery Life• Logic Level Gate Drive• Diode Exhibits High Speed, Soft Recovery• Avalanche Energy Specified• IDSS and VDS(on) Specified at Elevated Temperature...

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SeekIC No. : 004436694 Detail

NTQS6463: Features: • New Low Profile TSSOP−8 Package• Ultra Low RDS(on)• Higher Efficiency Extending Battery Life• Logic Level Gate Drive• Diode Exhibits High Speed, Soft ...

NTQS6463 Data Sheet

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Part Number:
NTQS6463
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Description



Features:

• New Low Profile TSSOP−8 Package
• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Diode Exhibits High Speed, Soft Recovery
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperatures


Application

• Power Management in Portable and Battery−Powered Products, i.e.:
   Computers, Printers, PCMCIA Cards, Cellular and Cordless
  Telephones
• Lithium Ion Battery Applications
• Note Book PC


Pinout

Connection Diagram


Specifications

Rating Symbol Value Unit
Drain−to−Source Voltage VDSS -20 V
Gate−to−Source Voltage
VGS ±12 V
Drain Current (Note 1)
− Continuous @ TA = 25°C
− Continuous @ TA = 70°C
− Pulsed (Note 3)		 ID
ID
IDM		 −5.5
−4.4
±30		 A
Total Power Dissipation (Note 1)
@ TA = 25°C		 PD 0.93
W
Drain Current (Note 2)
− Continuous @ TA = 25°C
− Continuous @ TA = 70°C
− Pulsed (Note 3)		 ID
ID
IDM		 −6.8
−5.4
30		 a
Total Power Dissipation (Note 2)
@ TA = 25°C		 PD 1.39 w
Operating and Storage Temperature Range TJ and Tstg −55 to
+150		 °C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 40 V, IL = 18.4 A,
L = 5.0 mH, RG = 25 )		 EAS 845 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient		 RJC
RJA
 134
90		 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum 3, X 3, FR−4 board, steady state.
2. Mounted on 1, square (1 oz.) board, steady state.
3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%.


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