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NSR1020MW2T1G, NSR15DW1T1, NSR15TW1T1

Table of contents:
Info of NSR1020MW2T1G
Info of NSR15DW1T1
Info of NSR15TW1T1

NSR1020MW2T1G, NSR15DW1T1, NSR15TW1T1 Selling Leads, Datasheet

MFG:ON Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:SOD323 D/C:0805+

NSR1020MW2T1G, NSR15DW1T1, NSR15TW1T1 Datasheet download

Five Points

Part Number: NSR1020MW2T1G

Category: Discrete Semiconductor Products

MFG: ON Semiconductor (VA)

Package Cooled: SOD323

D/C: 0805+

Description: DIODE SCHOTTKY 1A 20V SOD-323

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NSR1020MW2T1G Parameters

Technical/Catalog Information	NSR1020MW2T1G
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Diode Type	Schottky
Voltage - DC Reverse (Vr) (Max)	20V
Current - Average Rectified (Io)	1A
Voltage - Forward (Vf) (Max) @ If	540mV @ 1A
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	40A @ 15V
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type	Surface Mount
Package / Case	SOD-323
Packaging	Digi-Reel?
Capacitance @ Vr, F	29pF @ 5V, 1MHz
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NSR1020MW2T1G NSR1020MW2T1G NSR1020MW2T1GOSDKR ND NSR1020MW2T1GOSDKRND NSR1020MW2T1GOSDKR

NSR1020MW2T1G General Description

This Schottky Barrier Diode in the SOD−323 package offers extremely low Vf performance. The low forward voltage makes them capable of handling high current in a very small package. The resulting device is ideally suited for application as a blocking diode in charging applications or as part of discrete buck converter or discrete boost converter. As part of a buck conversion circuit, a boost conversion circuit or a charging circuit the low Vf drop of the schottky improves the efficiency of the overall device by consuming less power in the forward mode.

NSR1020MW2T1G Maximum Ratings

Rating	Symbol	Value	Unit
Reverse Voltage	V_R	20	Vdc
Peak Revese Voltage	V_RM	30	V
Forward Power Dissipation @ T_A = 25°C Derate above 25°C	P_F	200 2.0	mW mW/°C
Forward Current (DC) Continuous	I_F	1	A
Forward Current t = 8.3 ms Half Sinewave	I_F	5	A
Junction Temperature	T_J	125 Max	°C
Storage Temperature Range	T_stg	−55 to +150	°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

NSR1020MW2T1G Features

• Low Forward Voltage − 0.24 Volts (Typ) @ I_F = 10 mAdc
• High Current Capability
• ESD Rating − Human Body Model: CLASS 3B
− Machine Model: C
• Pb−Free Packages are Available

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