NID3055L-094G, NID5001N, NID5003N Selling Leads, Datasheet
MFG:ON Package Cooled:TO-252 D/C:09+
NID3055L-094G, NID5001N, NID5003N Datasheet download
Part Number: NID3055L-094G
MFG: ON
Package Cooled: TO-252
D/C: 09+
NID3055L-094G, NID5001N, NID5003N
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Info of NID3055L-094G
Info of NID5001N
Info of NID5003N
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About NID5001N
PDF/DataSheet Download
Datasheet: NID5001N
File Size: 54925 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
About NID5001N
PDF/DataSheet Download
Datasheet: NID5001N
File Size: 54925 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
About NID5003N
PDF/DataSheet Download
Datasheet: NID5003N
File Size: 51460 KB
Manufacturer: ONSEMI [ON Semiconductor]
Download : Click here to Download
NID5001N General Description
HDPlus devices are an advanced series of power MOSFETs which utilize ON Semicondutor's latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp.
NID5001N Maximum Ratings
| Rating | Symbol | Value | Unit |
| Drain−to−Source Voltage Internally Clamped | VDSS | 42 | Vdc |
| Drain−to−Gate Voltage Internally Clamped (RGS = 1.0M ) | VDGR | 42 | Vdc |
| Gate−to−Source Voltage | VGS | ±14 | Vdc |
| Drain Current Continuous | ID | Internally Limited | |
| Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) |
PD | 64 1.0 1.56 |
W |
| Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) |
RJC RJA RJA |
1.95 120 80 |
°C/W |
| Single Pulse Drain−to−Source Avalanche Energy (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 3.2 Apk, L = 120 mH, RG = 25) |
EAS | 1215 | mJ |
| Operating and Storage Temperature Range (Note 3) | TJ, Tstg | −55 to 150 | °C |
NID5001N Features
• Low RDS(on)
• Current Limitation
• Thermal Shutdown with Automatic Restart
• Short Circuit Protection
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Slew Rate Control for Low Noise Switching
• Overvoltage Clamped Protection
• Current Limitation
• Thermal Shutdown with Automatic Restart
• Short Circuit Protection
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Slew Rate Control for Low Noise Switching
• Overvoltage Clamped Protection
NID5001N Connection Diagram
NID5003N General Description
HDPlurTM devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp.
NID5003N Maximum Ratings
| Rating | Symbol | Value | Unit |
| Drain−to−Source Voltage Internally Clamped | VDSS | 42 | Vdc |
| Gate−to−Source Voltage | VGS | ±14 | Vdc |
| Drain Current Continuous | ID | Internally Limited | |
| Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) |
PD | 1.3 2.3 |
W |
| Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) |
RJC RJA RJA |
3.0 95 54 |
°C/W |
| Single Pulse Drain−to−Source Avalanche Energy (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 3.2 Apk, L = 120 mH, RG = 25) |
EAS | 600 | mJ |
| Operating and Storage Temperature Range (Note 3) | TJ, Tstg | −55 to 150 | °C |
NID5003N Features
• Short Circuit Protection/Current Limit
• Thermal Shutdown with Automatic Restart
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Slew Rate Control for Low Noise Switching
• Overvoltage Clamped Protection
• Thermal Shutdown with Automatic Restart
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Slew Rate Control for Low Noise Switching
• Overvoltage Clamped Protection
NID5003N Connection Diagram
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