MOSFET 52V 9A N-Channel
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 59 V | ||
Gate-Source Breakdown Voltage : | +/- 15 V | Continuous Drain Current : | 9 A | ||
Resistance Drain-Source RDS (on) : | 181 mOhms at 4 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | DPAK | Packaging : | Tube |
Rating | Symbol | Value | Unit |
Drain−to−Source Voltage Internally Clamped | VDSS | 52−59 | V |
Gate−to−Source Voltage − Continuous | VGS | ±15 | V |
Drain Current − Continuous @ TA = 25 Drain Current − Single Pulse (tp = 10s) |
ID IDM |
9.0 35 |
A |
Total Power Dissipation @ TA = 25 | PD | 28.8 | W |
Operating and Storage Temperature Range | TJ, Tstg | −55 to 175 |
|
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 125 (VDD = 50 V, ID(pk) = 1.5 A, VGS = 10 V, RG = 25) |
EAS | 160 | mJ |
Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) |
RJC RJA RJA |
5.2 72 100 |
/W |
Maximum Lead Temperature for Soldering Purposes, 1/8, from Case for 10 s |
TL | 260 |
Technical/Catalog Information | NID9N05CL |
Vendor | ON Semiconductor |
Category | Integrated Circuits (ICs) |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
Mounting Type | Surface Mount |
Type | Low Side |
Voltage - Supply | - |
On-State Resistance | 153 mOhm |
Current - Output / Channel | - |
Current - Peak Output | 9A |
Packaging | Tube |
Input Type | Non-Inverting |
Number of Outputs | 1 |
Operating Temperature | -55°C ~ 175°C |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | NID9N05CL NID9N05CL |