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NID5003N

Features: • Short Circuit Protection/Current Limit• Thermal Shutdown with Automatic Restart• IDSS Specified at Elevated Temperature• Avalanche Energy Specified• Slew Rate Control for Low Noise Switching• Overvoltage Clamped ProtectionPinoutSpecifications Ra...

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SeekIC No. : 004433778 Detail

NID5003N: Features: • Short Circuit Protection/Current Limit• Thermal Shutdown with Automatic Restart• IDSS Specified at Elevated Temperature• Avalanche Energy Specified• Slew Ra...

NID5003N Data Sheet

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Part Number:
NID5003N
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/19

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Product Details

Description



Features:

• Short Circuit Protection/Current Limit
• Thermal Shutdown with Automatic Restart
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Slew Rate Control for Low Noise Switching
• Overvoltage Clamped Protection


Pinout

Connection Diagram


Specifications

Rating Symbol Value Unit
Drain−to−Source Voltage Internally Clamped VDSS 42 Vdc
Gate−to−Source Voltage VGS ±14 Vdc
Drain Current Continuous ID Internally Limited
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)		 PD 1.3
2.3		 W
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)		 RJC
RJA
RJA		 3.0
95
54		 °C/W
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL = 3.2 Apk, L = 120 mH, RG = 25)		 EAS 600 mJ
Operating and Storage Temperature Range (Note 3) TJ, Tstg −55 to 150 °C



Description

HDPlurTM devices are an advanced series of power MOSFETs NID5003N which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The NID5003N feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp.




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