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NID5001N

Features: • Low RDS(on)• Current Limitation• Thermal Shutdown with Automatic Restart• Short Circuit Protection• IDSS Specified at Elevated Temperature• Avalanche Energy Specified• Slew Rate Control for Low Noise Switching• Overvoltage Clamped Protect...

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SeekIC No. : 004433777 Detail

NID5001N: Features: • Low RDS(on)• Current Limitation• Thermal Shutdown with Automatic Restart• Short Circuit Protection• IDSS Specified at Elevated Temperature• Avalanche ...

NID5001N Data Sheet

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Part Number:
NID5001N
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/19

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Product Details

Description



Features:

• Low RDS(on)
• Current Limitation
• Thermal Shutdown with Automatic Restart
• Short Circuit Protection
• IDSS Specified at Elevated Temperature
• Avalanche Energy Specified
• Slew Rate Control for Low Noise Switching
• Overvoltage Clamped Protection


Pinout

Connection Diagram


Specifications

Rating Symbol Value Unit
Drain−to−Source Voltage Internally Clamped VDSS 42 Vdc
Drain−to−Gate Voltage Internally Clamped (RGS = 1.0M ) VDGR 42 Vdc
Gate−to−Source Voltage VGS ±14 Vdc
Drain Current Continuous ID Internally Limited
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)		 PD 64
1.0
1.56		 W
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)		 RJC
RJA
RJA		 1.95
120
80		 °C/W
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 25 Vdc, VGS = 5.0 Vdc,
IL = 3.2 Apk, L = 120 mH, RG = 25)		 EAS 1215 mJ
Operating and Storage Temperature Range (Note 3) TJ, Tstg −55 to 150 °C



Description

HDPlus devices are an advanced series of power MOSFETs NID5001N which utilize ON Semicondutor's latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The NID5001N feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp.




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