NEZ5964-8B, NEZ6472-4B, NEZ6472-4D Selling Leads, Datasheet
MFG:RF Package Cooled:N/A D/C:NEC
NEZ5964-8B, NEZ6472-4B, NEZ6472-4D Datasheet download
Part Number: NEZ5964-8B
MFG: RF
Package Cooled: N/A
D/C: NEC
MFG:RF Package Cooled:N/A D/C:NEC
NEZ5964-8B, NEZ6472-4B, NEZ6472-4D Datasheet download
MFG: RF
Package Cooled: N/A
D/C: NEC
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PDF/DataSheet Download
Datasheet: NEZ5964-8B
File Size: 245893 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NEZ6472-4B
File Size: 245893 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NEZ6472-4D
File Size: 111410 KB
Manufacturer: NEC [NEC]
Download : Click here to Download
The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications.
Internal input and output circuits matched to 50 are designed to provide good flatness of gain and output power in allocated band.
To reduce the thermal resistance, the device has a PHS (Plated Heat Sink) structure.
NEC's strigent quality assurance and test procedures guarantee the highest reliability and performance.
CHARACTERISTIC |
SYMBOL |
RATINGS |
UNIT | |
NEZ-4D, 4DD |
NEZ-8D, 8DD | |||
Drain to Source Voltage |
VDS |
15 |
15 |
V |
Gate to Source Voltage |
VGS |
12 |
12 |
V |
Gate to Drain Voltage |
VGD |
18 |
18 |
V |
Drain Current |
ID |
4.5 |
9.0 |
A |
Gate Current |
IG |
25 |
50 |
mA |
Total Power Dissipation |
PT |
25 |
50 |
W |
Channel Temperature |
Tch |
175 |
175 |
°C |
Storage Temperature |
Tstg |
65 to + 175 |
65 to + 175 |
°C |
• Internally matched to 50
• High power output
• High linear gain
• High reliability
• Low distortion