NEZ1414-8E Selling Leads, Price trend, NEZ1414-8E DataSheet download, circuit diagram from SeekIC.com

Features: • High Output Power : Po (1 dB) = +39.5 dBm typ.• High Linear Gain : 6.5 dB typ.• High Efficiency : 25 % typ.• Input and Output Internally Matched for Optimum performanceSpecifications CHARACTERISTIC SYMBOL RATINGS UNIT Drain to Source Voltage ...

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SeekIC No. : 004433599 Detail

NEZ1414-8E: Features: • High Output Power : Po (1 dB) = +39.5 dBm typ.• High Linear Gain : 6.5 dB typ.• High Efficiency : 25 % typ.• Input and Output Internally Matched for Optimum perfo...

NEZ1414-8E Data Sheet

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Part Number:: NEZ1414-8E
Supply Ability:: 5000

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1~5000

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Negotiable

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Upload time: 2024/6/3

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Recent History
What is this?

NEZ1414-2E evaluate
Features: • High Output Power : Po (1 dB) = +34.0 dBm typ.• High Linear Gain : 8.5 dB ...
NEZ1011-8E evaluate
Features: • High Output Power : Po (1 dB) = +39.5 dBm typ.• High Linear Gain : 6.5 dB ...
NEZ1011-2E evaluate
Features: • High Output Power : Po (1 dB) = +34.0 dBm typ.• High Linear Gain : 8.5 dB ...

Product Details

Description

Features:

• High Output Power : Po _{(1 dB)} = +39.5 dBm typ.
• High Linear Gain : 6.5 dB typ.
• High Efficiency : 25 % typ.
• Input and Output Internally Matched for Optimum performance

Specifications

CHARACTERISTIC	SYMBOL	RATINGS	UNIT
Drain to Source Voltage	V_DS	15	V
Gate to Source Voltage	V_GS	-7	V
Gate to Drain Voltage	V_GD	10	V
Drain Current	I_GF	+80	A
Gate Current	I_GR	80	mA
Total Power Dissipation	P_T	60	W
Channel Temperature	T_ch	175	°C
Storage Temperature	T_stg	65 to +175	°C

Description

The NEZ1011-8E and NEZ1414-8E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 external circuit. To reduce thermal resistance the NEZ1011-8E and NEZ1414-8E has a PHS (Plated Heat Sink) structure. The device incorporates a WSi (tungsten silicide) gate structure for high reliability.

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NEZ1414-8E

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