NEZ1414-2E

Features: • High Output Power : Po (1 dB) = +34.0 dBm typ.• High Linear Gain : 8.5 dB typ. (NEZ1011-2E), 7.5 dB typ. (NEZ1414-2E)• High Efficiency : 30 % typ.• Input and Output Internally Matched for Optimum performanceSpecifications CHARACTERISTIC SYMBOL RATIN...

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SeekIC No. : 004433598 Detail

NEZ1414-2E: Features: • High Output Power : Po (1 dB) = +34.0 dBm typ.• High Linear Gain : 8.5 dB typ. (NEZ1011-2E), 7.5 dB typ. (NEZ1414-2E)• High Efficiency : 30 % typ.• Input and Outp...

floor Price/Ceiling Price

Part Number:
NEZ1414-2E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

• High Output Power : Po (1 dB) = +34.0 dBm typ.
• High Linear Gain : 8.5 dB typ. (NEZ1011-2E), 7.5 dB typ. (NEZ1414-2E)
• High Efficiency : 30 % typ.
• Input and Output Internally Matched for Optimum performance



Specifications

CHARACTERISTIC
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDS
15
V
Gate to Source Voltage
VGS
-7
V
Gate to Drain Voltage
VGD
3.0 (NEZ1011-2E)
2.5 (NEZ1414-2E)
V
Drain Current
IGF
+20
A
Gate Current
IGR
20
mA
Total Power Dissipation
PT
15
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
65 to +175
°C



Description

The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The NEZ1011-2E and NEZ1414-2E incorporates a WSi (tungsten silicide) gate structure for high reliability.




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