NEZ1414-2E Selling Leads, Price trend, NEZ1414-2E DataSheet download, circuit diagram from SeekIC.com

Features: • High Output Power : Po (1 dB) = +34.0 dBm typ.• High Linear Gain : 8.5 dB typ. (NEZ1011-2E), 7.5 dB typ. (NEZ1414-2E)• High Efficiency : 30 % typ.• Input and Output Internally Matched for Optimum performanceSpecifications CHARACTERISTIC SYMBOL RATIN...

See larger image

SeekIC No. : 004433598 Detail

NEZ1414-2E: Features: • High Output Power : Po (1 dB) = +34.0 dBm typ.• High Linear Gain : 8.5 dB typ. (NEZ1011-2E), 7.5 dB typ. (NEZ1414-2E)• High Efficiency : 30 % typ.• Input and Outp...

NEZ1414-2E Data Sheet

Get Latest Price

Part Number:: NEZ1414-2E
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/11/22

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

NEZ1011-2E evaluate
Features: • High Output Power : Po (1 dB) = +34.0 dBm typ.• High Linear Gain : 8.5 dB ...
NEZ1011-8E evaluate
Features: • High Output Power : Po (1 dB) = +39.5 dBm typ.• High Linear Gain : 6.5 dB ...
NEZ1414-8E evaluate
Features: • High Output Power : Po (1 dB) = +39.5 dBm typ.• High Linear Gain : 6.5 dB ...

Product Details

Description

Features:

• High Output Power : Po _{(1 dB)} = +34.0 dBm typ.
• High Linear Gain : 8.5 dB typ. (NEZ1011-2E), 7.5 dB typ. (NEZ1414-2E)
• High Efficiency : 30 % typ.
• Input and Output Internally Matched for Optimum performance

Specifications

CHARACTERISTIC	SYMBOL	RATINGS	UNIT
Drain to Source Voltage	V_DS	15	V
Gate to Source Voltage	V_GS	-7	V
Gate to Drain Voltage	V_GD	3.0 (NEZ1011-2E) 2.5 (NEZ1414-2E)	V
Drain Current	I_GF	+20	A
Gate Current	I_GR	20	mA
Total Power Dissipation	P_T	15	W
Channel Temperature	T_ch	175	°C
Storage Temperature	T_stg	65 to +175	°C

Description

The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 external circuit. To reduce thermal resistance the device has a PHS (Plated Heat Sink) structure. The NEZ1011-2E and NEZ1414-2E incorporates a WSi (tungsten silicide) gate structure for high reliability.

Customers Who Bought This Item Also Bought

NEZ1414-2E
US $$60.00 - 90.00 / Piece

Supply Ability:10000Week

View details
BT06蓝牙串口模块 51单片机兼容HC-06
US $$1.30 - 1.50 / Piece

Supply Ability:100Day

View details
PM150RSA060-S81AH0G,IGBT
US $$41.70 - 42.00 / Piece

Supply Ability:10Day

View details
ARDUINO IIC/I2C 液晶模块，IGBT
US $$4.50 - 4.80 / Piece

Supply Ability:100Day

View details
DS-4008HCI English version video capture card Hai Kang
US $$120.00 - 120.00 / Piece

Supply Ability:120Week

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

NEZ1414-2E

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

Memory Cards, Modules(216)

Discrete Semiconductor Products(7459)

Crystals and Oscillators(858)

Test Equipment(3237)

Cables, Wires(3584)

Filters(263)