Features: • High Output Power : Po (1 dB) = +39.5 dBm typ.• High Linear Gain : 6.5 dB typ.• High Efficiency : 25 % typ.• Input and Output Internally Matched for Optimum performanceSpecifications CHARACTERISTIC SYMBOL RATINGS UNIT Drain to Source Voltage ...
NEZ1011-8E: Features: • High Output Power : Po (1 dB) = +39.5 dBm typ.• High Linear Gain : 6.5 dB typ.• High Efficiency : 25 % typ.• Input and Output Internally Matched for Optimum perfo...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • High Output Power : Po (1 dB) = +34.0 dBm typ.• High Linear Gain : 8.5 dB ...
Features: • High Output Power : Po (1 dB) = +34.0 dBm typ.• High Linear Gain : 8.5 dB ...
Features: • High Output Power : Po (1 dB) = +39.5 dBm typ.• High Linear Gain : 6.5 dB ...
• High Output Power : Po (1 dB) = +39.5 dBm typ.
• High Linear Gain : 6.5 dB typ.
• High Efficiency : 25 % typ.
• Input and Output Internally Matched for Optimum performance
CHARACTERISTIC |
SYMBOL |
RATINGS |
UNIT |
Drain to Source Voltage |
VDS |
15 |
V |
Gate to Source Voltage |
VGS |
-7 |
V |
Gate to Drain Voltage |
VGD |
10 |
V |
Drain Current |
IGF |
+80 |
A |
Gate Current |
IGR |
80 |
mA |
Total Power Dissipation |
PT |
60 |
W |
Channel Temperature |
Tch |
175 |
°C |
Storage Temperature |
Tstg |
65 to +175 |
°C |
The NEZ1011-8E and NEZ1414-8E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 external circuit. To reduce thermal resistance the NEZ1011-8E and NEZ1414-8E has a PHS (Plated Heat Sink) structure. The device incorporates a WSi (tungsten silicide) gate structure for high reliability.