NEZ6472-4D

• Internally matched to 50
• High power output
• High linear gain
• High reliability
• Low distortion

The NEZ6472-4D is one member of the NEZ series of microwave power GaAs FETs offer high output power,high gain and high efficiency at C-band for microwave and satellite communications.Internal input and output circuits matched to 50 are designed to provide good flatness of gain and output power in allocated band.To reduce the thermal resistance, the NEZ6472-4D has a PHS (plated heat sink) structure.And the features are:internally matched to 50 ,high power output,high linear gain,high reliability and low distortion.

The absolute maximum ratings of the NEZ6472-4D can be summarized as:(1)drain to source voltage:15 V;(2)gate to source voltage:-12 V;(3)gate to drain voltage:-18 V;(4)drain current:4.5 or 9.0 A;(5)gate current:25 or 50 mA;(6)total power dissipation:25 or 50 W;(7)channel temperature:175 °C;(8)storage temperature:-65 to + 175 °C.If you want to know more information such as the electrical characteristics about the NEZ6472-4D,please download the datasheet in www.seekic.com or www.chinaicmart.com .