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NEZ6472-15D

Features: • Internally matched to 50 • High power output• High linear gain• High reliability• Low distortionSpecifications CHARACTERISTIC SYMBOL RATINGS UNIT Drain to Source Voltage VDS 15 V Gate to Source Voltage VGS -12 V G...

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NEZ6472-15D: Features: • Internally matched to 50 • High power output• High linear gain• High reliability• Low distortionSpecifications CHARACTERISTIC SYMBOL RATINGS ...

NEZ6472-15D Data Sheet

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Part Number:
NEZ6472-15D
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

• Internally matched to 50
• High power output
• High linear gain
• High reliability
• Low distortion




Specifications

CHARACTERISTIC
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDS
15
V
Gate to Source Voltage
VGS
-12
V
Gate to Drain Voltage
VGD
-18
V
Drain Current
ID
18
A
Gate Current
IG
100
mA
Total Power Dissipation
PT
100
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
65 to +175
°C



Description

The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications.

Internal input and output circuits of NEZ Series matched to 50 W are designed to provide good flatness of gain and output power in allocated band.

To reduce the thermal resistance, the NEZ Series has a PHS (Plated Heat Sink) structure.

NEC's NEZ Series strigent quality assurance and test procedures guarantee the highest reliability and performance.




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