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NE42484C, NE42484C-T1, NE425S01

Table of contents:
Info of NE42484C
Info of NE42484C-T1
Info of NE425S01

NE42484C, NE42484C-T1, NE425S01 Selling Leads, Datasheet

MFG:N/A Package Cooled:N/A D/C:07+

NE42484C, NE42484C-T1, NE425S01 Datasheet download

Five Points

Part Number: NE42484C

MFG: N/A

Package Cooled: N/A

D/C: 07+

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NE425S01 General Description

The NE425S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems.

NE425S01 Maximum Ratings

Drain to Source Voltage	V_DS	4.0	V
Gate to Source Voltage	V_GS	- 3.0	V
Drain Current	I_D	I_DSS	mA
Gate Current	I_G	100	A
Total Power Dissipation	P_tot	165	mW
Channel Temperature	T_ch	125
Storage Temperature	T_stg	- 65 to +125

NE425S01 Features

• Super Low Noise Figure & High Associated Gain
NF = 0.60 dB TYP, Ga = 12.0 dB TYP. at f = 12 GHz
• Gate Length: Lg 0.20 m
• Gate Width : Wg = 200 m

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