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NE429M01

Features: • Super low noise figure & High associated gain NF = 0.9 dB TYP, Ga = 10 dB TYP. @ f = 12 GHz• 6-pin super minimold package• Gate width: Wg = 200mPinoutSpecifications Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4.0 V Gate to Sourc...

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SeekIC No. : 004433338 Detail

NE429M01: Features: • Super low noise figure & High associated gain NF = 0.9 dB TYP, Ga = 10 dB TYP. @ f = 12 GHz• 6-pin super minimold package• Gate width: Wg = 200mPinoutSpecifications...

NE429M01 Data Sheet

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Part Number:
NE429M01
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• Super low noise figure & High associated gain
  NF = 0.9 dB TYP, Ga = 10 dB TYP. @ f = 12 GHz
• 6-pin super minimold package
• Gate width: Wg = 200m


Pinout

Connection Diagram


Specifications

Parameter Symbol Ratings Unit
Drain to Source Voltage VDS
4.0 V
Gate to Source Voltage VGS
- 3.0 V
Drain Current ID
IDSS
mA
Gate Current IG
100 A
Total Power Dissipation Ptot
125 mW
Channel Temperature Tch
125
Storage Temperature Tstg
- 65 to +125



Description

The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.




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