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NE41615-010, NE4210S01, NE4210S01-T1B

NE41615-010, NE4210S01, NE4210S01-T1B Selling Leads, Datasheet

MFG:NEC  Package Cooled:SMD  D/C:99+

NE41615-010, NE4210S01, NE4210S01-T1B Picture

NE41615-010, NE4210S01, NE4210S01-T1B Datasheet download

Five Points

Part Number: NE41615-010

 

MFG: NEC

Package Cooled: SMD

D/C: 99+

 

 

 
 
 
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NE41615-010 Suppliers

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  • NE41615

  • Vendor: Nec Pack: CAN Qty: 275  Adddate: 2024-11-26
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  • TOPIA TECHNOLOGY CO. LTD   China
    Contact: Ms.Mandy   MSN:mandyxi2006@hotmail.com
    Tel: 0086-755-83001125
    Fax: 0086-755-83001175
    (13)
  • NE4210S01

  • Vendor: Nec D/C: 04+& Qty: 4015  Adddate: 2024-11-26
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  • ASK SEMICONDUCTOR LTD   China
    Contact: Mr.Subaninfo@asksemi.com   MSN:asksemiconductor@hotmail.com
    Tel: 86-0755-33060075/0755-29183325/0755-83221176
    Fax: 86-0755-33060076
    (5)
  • NE4210S01

  • Vendor: Nec Qty: 3  Adddate: 2024-11-26
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  • Memory & IC Group   China
    Contact: Mr.Luo   MSN:hubert@memoryic.com
    Tel: 86-755-23937889
    Fax: 86-755-23937799
    (5)

About NE416

PDF/DataSheet Download

Datasheet: NE416

File Size: 593717 KB

Manufacturer: NEC [NEC]

Download : Click here to Download

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NE4210S01 Suppliers

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  • NE4210S01

  • Vendor: Nec Qty: 3  Adddate: 2024-11-26
  • Inquire Now
  • Memory & IC Group   China
    Contact: Mr.Luo   MSN:hubert@memoryic.com
    Tel: 86-755-23937889
    Fax: 86-755-23937799
    (5)
  • NE4210S01

  • Vendor: Nec D/C: 04+& Qty: 4015  Adddate: 2024-11-26
  • Inquire Now
  • ASK SEMICONDUCTOR LTD   China
    Contact: Mr.Subaninfo@asksemi.com   MSN:asksemiconductor@hotmail.com
    Tel: 86-0755-33060075/0755-29183325/0755-83221176
    Fax: 86-0755-33060076
    (5)
  • NE41615

  • Vendor: Nec Pack: CAN Qty: 275  Adddate: 2024-11-26
  • Inquire Now
  • TOPIA TECHNOLOGY CO. LTD   China
    Contact: Ms.Mandy   MSN:mandyxi2006@hotmail.com
    Tel: 0086-755-83001125
    Fax: 0086-755-83001175
    (13)
  • NE4210S01

  • Vendor: Nec D/C: 04+& Qty: 4015  Adddate: 2024-11-26
  • Inquire Now
  • ASK SEMICONDUCTOR LTD   China
    Contact: Mr.Subaninfo@asksemi.com   MSN:asksemiconductor@hotmail.com
    Tel: 86-0755-33060075/0755-29183325/0755-83221176
    Fax: 86-0755-33060076
    (5)
  • NE4210S01

  • Vendor: Nec Qty: 3  Adddate: 2024-11-26
  • Inquire Now
  • Memory & IC Group   China
    Contact: Mr.Luo   MSN:hubert@memoryic.com
    Tel: 86-755-23937889
    Fax: 86-755-23937799
    (5)

About NE4210S01

PDF/DataSheet Download

Datasheet: NE4210S01

File Size: 66801 KB

Manufacturer: NEC [NEC]

Download : Click here to Download

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NE4210S01-T1B Suppliers

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  • NE41615

  • Vendor: Nec Pack: CAN Qty: 275  Adddate: 2024-11-26
  • Inquire Now
  • TOPIA TECHNOLOGY CO. LTD   China
    Contact: Ms.Mandy   MSN:mandyxi2006@hotmail.com
    Tel: 0086-755-83001125
    Fax: 0086-755-83001175
    (13)
  • NE4210S01

  • Vendor: Nec D/C: 04+& Qty: 4015  Adddate: 2024-11-26
  • Inquire Now
  • ASK SEMICONDUCTOR LTD   China
    Contact: Mr.Subaninfo@asksemi.com   MSN:asksemiconductor@hotmail.com
    Tel: 86-0755-33060075/0755-29183325/0755-83221176
    Fax: 86-0755-33060076
    (5)
  • NE4210S01

  • Vendor: Nec Qty: 3  Adddate: 2024-11-26
  • Inquire Now
  • Memory & IC Group   China
    Contact: Mr.Luo   MSN:hubert@memoryic.com
    Tel: 86-755-23937889
    Fax: 86-755-23937799
    (5)

About NE4210S01-T1B

PDF/DataSheet Download

Datasheet: NE4210S01-T1B

File Size: 66801 KB

Manufacturer: NEC [NEC]

Download : Click here to Download

Related PDF Download

Related Part Number

NE4210S01 General Description

The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems.

NE4210S01 Maximum Ratings

Parameter Symbol Ratings Unit
Drain to Source Voltage VDS 4.0 V
Gate to Source Voltage VGS 3.0 V
Drain Current ID IDSS mA
Gate Current IG 100 A
Total Power Dissipation Ptot 165 mW
Channel Temperature Tch 125
Storage Temperature Tstg 65 to +125

NE4210S01 Features

• Super Low Noise Figure & High Associated Gain
  NF = 0.5 dB TYP. Ga = 13.0 dB TYP. @f = 12 GHz
• Gate Length: Lg  0.20 m
• Gate Width : Wg = 160 m

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