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NE4572, NE46134, NE46134-T1

Table of contents:
Info of NE4572
Info of NE46134
Info of NE46134-T1

NE4572, NE46134, NE46134-T1 Selling Leads, Datasheet

MFG:NEC Category:Discrete Semiconductor Products Package Cooled:SOP8 D/C:08+

NE4572, NE46134, NE46134-T1 Datasheet download

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Part Number: NE46134-T1

Category: Discrete Semiconductor Products

MFG: NEC

Package Cooled: SOP8

D/C: 08+

Description: TRANS NPN 1GHZ SOT-89

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NE46134 General Description

NEC's NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high dynamic range. This device exhibits an outstanding combination of high gain and low intermodulation distortion, as well as low noise figure. The NE461 series offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. Devices are available in a low cost surface mount package (SOT-89) as well as in chip form.

NE46134 Maximum Ratings

SYMBOLS	PARAMETERS	UNITS	RATINGS
V_CBO	Collector to Base Voltage	V	30
V_CEO	Collector to Emitter Voltage	V	15
V_EBO	Emitter to Base Voltage	V	3
I_C	Collector Current	mA	250
P_T	Total Power Dissipation NE46100² NE46134³	W W	3.75 2.0
T_J	Junction Temperature NE46100 NE46134		200 150
T_STG	Storage Temperature NE46100 NE46134		-65 to +200 -65 to +150

Notes:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. Chip mounted on an infinite heat sink (see AN-1001 for handling instructions).
3. Packaged device mounted on 0.7 mm x 2.5 cm2 double sided ceramic substrate (copper plating).

NE46134 Features

• HIGH DYNAMIC RANGE
• LOW IM DISTORTION: -40 dBc
• HIGH OUTPUT POWER : 27.5 dBm at TYP
• LOW NOISE: 1.5 dB TYP at 500 MHz
• LOW COST

NE46134-T1 Parameters

Technical/Catalog Information	NE46134-T1
Vendor	NEC
Category	Discrete Semiconductor Products
Frequency - Transition	500MHz
Noise Figure (dB Typ @ f)	1.5dB ~ 2dB @ 500MHz ~ 1GHz
Current - Collector (Ic) (Max)	250mA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 50mA, 10V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Gain	-
Power - Max	2W
Compression Point (P1dB)	27.5dBm
Package / Case	SOT-89
Packaging	Tape & Reel (TR)
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	NE46134 T1 NE46134T1 NE46134TR ND NE46134TRND NE46134TR

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