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NDT2955NL, NDT3055, NDT3055L

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Info of NDT2955NL
Info of NDT3055
Info of NDT3055L

NDT2955NL, NDT3055, NDT3055L Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:TO-223 D/C:04+

NDT2955NL, NDT3055, NDT3055L Datasheet download

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Part Number: NDT3055L

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: TO-223

D/C: 04+

Description: MOSFET N-CH 60V 4A SOT-223-4

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NDT3055 Parameters

Technical/Catalog Information	NDT3055
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	100 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	250pF @ 30V
Power - Max	1.1W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	15nC @ 10V
Package / Case	SOT-223-4
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDT3055 NDT3055 NDT3055DKR ND NDT3055DKRND NDT3055DKR

NDT3055 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

NDT3055 Maximum Ratings

Symbol	Parameter	NDT3055	Units
V_DSS	Drain-Source Voltage	60	V
V_GSS	Gate-Source Voltage - Continuous	±20	V
I_D	Maximum Drain Current - Continuous (Note 1a) - Pulsed	4	A
I_D	Maximum Drain Current - Continuous (Note 1a) - Pulsed	25	A
P_D	Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c)	3	W
		1.3
		1.1
T_J,T_STG	Operating and Storage Temperature Range	-65 to 150
THERMAL CHARACTERISTICS
R_JA	Thermal Resistance, Junction-to-Ambient (Note 1a)	42	/W
R_JC	Thermal Resistance, Junction-to-Case (Note 1)	12	/W
* Order option J23Z for cropped center drain lead.

NDT3055 Features

`4 A, 60 V. R_DS(ON) = 0.100 @ V_GS= 10 V.
`High density cell design for extremely low R_DS(ON).
`High power and current handling capability in a widely used surface mount package.

NDT3055 Connection Diagram

NDT3055L Parameters

Technical/Catalog Information	NDT3055L
Vendor	Fairchild Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	4A
Rds On (Max) @ Id, Vgs	100 mOhm @ 4A, 10V
Input Capacitance (Ciss) @ Vds	345pF @ 25V
Power - Max	1.1W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	20nC @ 10V
Package / Case	SOT-223-4
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDT3055L NDT3055L NDT3055LCT ND NDT3055LCTND NDT3055LCT

NDT3055L General Description

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.

NDT3055L Maximum Ratings

Symbol	Parameter	NDT3055L	Units
V_DSS	Drain-Source Voltage	60	V
V_GSS	Gate-Source Voltage - Continuous	±20	V
I_D	Maximum Drain Current - Continuous (Note 1a) - Pulsed	4	A
I_D	Maximum Drain Current - Continuous (Note 1a) - Pulsed	25	A
P_D	Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c)	3	W
		1.3
		1.1
T_J,T_STG	Operating and Storage Temperature Range	-65 to 150
THERMAL CHARACTERISTICS
R_JA	Thermal Resistance, Junction-to-Ambient (Note 1a)	42	/W
R_JC	Thermal Resistance, Junction-to-Case (Note 1)	12	/W
* Order option J23Z for cropped center drain lead.

NDT3055L Features

`4 A, 60 V. R_DS(ON) = 0.100 @ V_GS = 10 V, R_DS(ON) = 0.120 @ V_GS = 4.5 V.
`Low drive requirements allowing operation directly from logic drivers. V_GS(TH) < 2V.
`High density cell design for extremely low R_DS(ON).
`High power and current handling capability in a widely used surface mount package.

NDT3055L Connection Diagram

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