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NDS331N, NDS332, NDS332N

NDS331N, NDS332, NDS332N Selling Leads, Datasheet

MFG:Fairchild Semiconductor (VA)  Category:Discrete Semiconductor Products  Package Cooled:Sot-23  D/C:06+/07+

NDS331N Picture

NDS331N, NDS332, NDS332N Datasheet download

Five Points

Part Number: NDS331N

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor (VA)

Package Cooled: Sot-23

D/C: 06+/07+

Description: MOSFET N-CH 20V 1.3A SSOT3

 

 
 
 
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  • NDS331N

  • Vendor: Fairchild D/C: 04+& Qty: 2521  Adddate: 2024-06-10
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  • ASK SEMICONDUCTOR LTD   China
    Contact: Mr.Subaninfo@asksemi.com   MSN:asksemiconductor@hotmail.com
    Tel: 86-0755-33060075/0755-29183325/0755-83221176
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    (5)
  • NDS331N

  • Vendor: Fairchild D/C: 06+& Qty: 1,000,000 Note: 04 OEM STK  Adddate: 2024-06-10
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  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
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  • NDS331N-NL

  • Vendor: Fairchild Pack: SOT D/C: 07+& Qty: 30000  Adddate: 2024-06-10
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  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
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  • NDS0605

  • D/C: 06+& Qty: 20000 Note: OEMAN  Adddate: 2024-06-10
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  • H.K.S.K Electronic Co.,Ltd   China
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    Fax: 86-0755-83210427
    (0)

About NDS331N

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Datasheet: NDS331N

File Size: 61079 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • NDS332P

  • Vendor: FSC Pack: Original D/C: 12+& Qty: 3000000  Adddate: 2024-06-10
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  • TODENKI ELECTRONICS COMPANY   China
    Contact: Ms.Alice  
    Tel: 86-755-82565937
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    (14)
  • NDS332P

  • Vendor: FSC Qty: ?9,000 Note: closeout  Adddate: 2024-06-10
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  • USA IC LTD. (ASIA)   China
    Contact: Mr.Martin Qiu  
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  • NDS332P

  • D/C: 06+& Qty: 20000 Note: OEMAN  Adddate: 2024-06-10
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  • H.K.S.K Electronic Co.,Ltd   China
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  • NDS332P

  • Vendor: Fairchild D/C: 06+& Qty: 10,000 Note: 04 OEM STK  Adddate: 2024-06-10
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  • ALCON TECHNOLOGY CO., LTD.   China
    Contact: Mr.simonzhu  
    Tel: 86-755-83803182
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About NDS332

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Datasheet: NDS332

File Size: 80570 KB

Manufacturer: FAIRCHILD [Fairchild Semiconductor]

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  • NDS0605

  • D/C: 06+& Qty: 20000 Note: OEMAN  Adddate: 2024-06-10
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  • H.K.S.K Electronic Co.,Ltd   China
    Contact: Ms.browinezhong   MSN:browine_zhong@hotmail.com
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  • NDS0605

  • Vendor: FSC Pack: Original D/C: 12+& Qty: 3000000  Adddate: 2024-06-10
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  • TODENKI ELECTRONICS COMPANY   China
    Contact: Ms.Alice  
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    Fax: 86-755-83206987
    (14)
  • NDS0605-NL

  • Vendor: Fairchild Pack: SOT D/C: 06+& Qty: 9000  Adddate: 2024-06-10
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  • shenzhengzhenghuaCompany   China
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  • NDS0605-NL

  • Vendor: Fairchild Pack: SOT D/C: 07+& Qty: 30000  Adddate: 2024-06-10
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  • Umos Electronic(HK) CO.,LTD.   China
    Contact: Mr.sunsunny   MSN:ic-mos@163.com
    Tel: 0086-755-61282699
    Fax: 0086-755-61174144
    (11)
  • NDS0610

  • Vendor: Fairchild D/C: 06+& Qty: 100,000 Note: 04 OEM STK  Adddate: 2024-06-10
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  • ALCON TECHNOLOGY CO., LTD.   China
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About NDS02ZG-M6

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Datasheet: NDS02ZG-M6

File Size: 320036 KB

Manufacturer: POWER-ONE [Power-One]

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NDS331N Parameters

Technical/Catalog InformationNDS331N
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C1.3A
Rds On (Max) @ Id, Vgs160 mOhm @ 1.5A, 4.5V
Input Capacitance (Ciss) @ Vds 162pF @ 10V
Power - Max460mW
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs5nC @ 4.5V
Package / CaseSuperSOT?-3
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NDS331N
NDS331N
NDS331NDKR ND
NDS331NDKRND
NDS331NDKR

NDS331N General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

NDS331N Maximum Ratings

Symbol Parameter NDS331N Units
VDSS Drain-Source Voltage 20 V
VGSS Gate-Source Voltage - Continuous 8 V
ID Maximum Drain Current - Continuous (Note 1a)
- Pulsed
1.3 A
10
PD Maximum Power Dissipation (Note 1a)
(Note 1b)
0.5 W
0.46
TJ,TSTG Operating and Storage Temperature Range -55 to 150
THERMAL CHARACTERISTICS
RJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
250 /W
RJC Thermal Resistance, Junction-to-Case (Note 1) 75 /W

NDS331N Features

`1.3 A, 20 V. RDS(ON) = 0.21 @ VGS= 2.7 V
                     RDS(ON) = 0.16 @ VGS= 4.5 V.
`Industry standard outline SOT-23 surface mount package using poprietary SuperSOTTM-3 design for superior thermaland electrical capabilities.
`High density cell design for extremely low RDS(ON).
`Exceptional on-resistance and maximum DC current capability.

NDS331N Connection Diagram

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