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NDP506, NDP5060, NDP5060L

Table of contents:
Info of NDP506
Info of NDP5060
Info of NDP5060L

NDP506, NDP5060, NDP5060L Selling Leads, Datasheet

MFG:NS Package Cooled:TO-220 D/C:05+

NDP506, NDP5060, NDP5060L Datasheet download

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Part Number: NDP506

MFG: NS

Package Cooled: TO-220

D/C: 05+

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NDP5060 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDP5060 Maximum Ratings

Symbol	Parameter	NDP5060	NDB5060	Units
V_DSS	Drain-Source Voltage	60		V
V_DGR	Drain-Gate Voltage (R_GS 1 M)	60		V
V_GSS	Gate-Source Voltage - Continuous - Nonrepetitive (t_P < 50 µs)	±20		V
		±40
I_D	Drain Current - Continuous - Pulsed	26		A
		78
P_D	Total Power Dissipation @ T_C = 25°C Derate above 25°C	68		W
		0.45		W/
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175

NDP5060 Features

`26 A, 60 V. R_DS(ON) = 0.05 @ V_GS= 10 V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R_DS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

NDP5060L General Description

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

NDP5060L Maximum Ratings

Symbol	Parameter	NDP5060L	NDB5060L	Units
V_DSS	Drain-Source Voltage	60		V
V_DGR	Drain-Gate Voltage (R_GS 1 M)	60		V
V_GSS	Gate-Source Voltage - Continuous - Nonrepetitive (t_P < 50 µs)	± 16		V
		± 25
I_D	Drain Current - Continuous - Pulsed	26		A
		78
P_D	Total Power Dissipation @ T_C = 25°C Derate above 25°C	68		W
		0.45		W/
T_J,T_STG	Operating and Storage Temperature Range	-65 to 175

NDP5060L Features

`26 A, 60 V. R_DS(ON) = 0.05 @ V_GS= 5 V
R_DS(ON) = 0.035 @ V_GS= 10 V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R_DS(ON).
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

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