NDP408B, NDP408BE, NDP410A Selling Leads, Datasheet
MFG:KA Package Cooled:TO-220 D/C:07+
NDP408B, NDP408BE, NDP410A Datasheet download
Part Number: NDP408B
MFG: KA
Package Cooled: TO-220
D/C: 07+
NDP408B, NDP408BE, NDP410A
- Table of contents:
Info of NDP408B
Info of NDP408BE
Info of NDP410A
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About NDP408B
PDF/DataSheet Download
Datasheet: NDP408B
File Size: 74813 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About NDP408BE
PDF/DataSheet Download
Datasheet: NDP408BE
File Size: 74813 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
About NDP410A
PDF/DataSheet Download
Datasheet: NDP410A
File Size: 75785 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
NDP408B General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDP408B Maximum Ratings
|
Symbol |
Parameter |
NDP408A NDP408AE NDB408A NDB408AE |
NDP408B NDP408BE NDB408B NDB408BE |
Units |
|
VDSS |
Drain-Source Voltage |
60 |
V | |
|
VDGR |
Drain-Gate Voltage (RGS < 1 M) |
60 |
V | |
|
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) |
± 20 |
V | |
|
± 40 | ||||
|
ID |
Drain Current - Continuous - Pulsed |
12 |
11 |
A |
|
36 |
33 | |||
|
PD |
Total Power Dissipation Derate above 25°C |
50 |
W | |
|
0.33 |
W/ | |||
|
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
||
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
||
NDP408B Features
·12 and 11A, 80V. RDS(ON) = 0.16 and 0.20W.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design (3 million/in²) for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design (3 million/in²) for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDP408BE General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDP408BE Maximum Ratings
|
Symbol |
Parameter |
NDP408A NDP408AE NDB408A NDB408AE |
NDP408B NDP408BE NDB408B NDB408BE |
Units |
|
VDSS |
Drain-Source Voltage |
60 |
V | |
|
VDGR |
Drain-Gate Voltage (RGS < 1 M) |
60 |
V | |
|
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) |
± 20 |
V | |
|
± 40 | ||||
|
ID |
Drain Current - Continuous - Pulsed |
12 |
11 |
A |
|
36 |
33 | |||
|
PD |
Total Power Dissipation Derate above 25°C |
50 |
W | |
|
0.33 |
W/ | |||
|
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
||
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
||
NDP408BE Features
·12 and 11A, 80V. RDS(ON) = 0.16 and 0.20W.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design (3 million/in²) for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design (3 million/in²) for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
NDP410A General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDP410A Maximum Ratings
|
Symbol |
Parameter |
NDP410A NDP410AE NDB410A NDB410AE |
NDP410B NDP410BE NDB410B NDB410BE |
Units |
|
VDSS |
Drain-Source Voltage |
100 |
V | |
|
VDGR |
Drain-Gate Voltage (RGS < 1 M) |
100 |
V | |
|
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
|
± 40 | ||||
|
ID |
Drain Current - Continuous - Pulsed |
9 |
8 |
A |
|
36 |
32 | |||
|
PD |
Total Power Dissipation Derate above 25°C |
50 |
W | |
|
0.33 |
W/ | |||
|
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
||
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
||
NDP410A Features
`9 and 8A, 100V. RDS(ON) = 0.25 and 0.30.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design (3 million/in²) for extremely low RDS(ON).
`TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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