NDP408B, NDP408BE, NDP410A Selling Leads, Datasheet
MFG:KA Package Cooled:TO-220 D/C:07+
![NDP408B, NDP408BE, NDP410A Picture](/images/ic.gif)
NDP408B, NDP408BE, NDP410A Datasheet download
Part Number: NDP408B
MFG: KA
Package Cooled: TO-220
D/C: 07+
MFG:KA Package Cooled:TO-220 D/C:07+
NDP408B, NDP408BE, NDP410A Datasheet download
MFG: KA
Package Cooled: TO-220
D/C: 07+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: NDP408B
File Size: 74813 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDP408BE
File Size: 74813 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: NDP410A
File Size: 75785 KB
Manufacturer: FAIRCHILD [Fairchild Semiconductor]
Download : Click here to Download
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Symbol |
Parameter |
NDP408A NDP408AE NDB408A NDB408AE |
NDP408B NDP408BE NDB408B NDB408BE |
Units |
VDSS |
Drain-Source Voltage |
60 |
V | |
VDGR |
Drain-Gate Voltage (RGS < 1 M) |
60 |
V | |
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) |
± 20 |
V | |
± 40 | ||||
ID |
Drain Current - Continuous - Pulsed |
12 |
11 |
A |
36 |
33 | |||
PD |
Total Power Dissipation Derate above 25°C |
50 |
W | |
0.33 |
W/ | |||
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
||
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Symbol |
Parameter |
NDP408A NDP408AE NDB408A NDB408AE |
NDP408B NDP408BE NDB408B NDB408BE |
Units |
VDSS |
Drain-Source Voltage |
60 |
V | |
VDGR |
Drain-Gate Voltage (RGS < 1 M) |
60 |
V | |
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs) |
± 20 |
V | |
± 40 | ||||
ID |
Drain Current - Continuous - Pulsed |
12 |
11 |
A |
36 |
33 | |||
PD |
Total Power Dissipation Derate above 25°C |
50 |
W | |
0.33 |
W/ | |||
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
||
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Symbol |
Parameter |
NDP410A NDP410AE NDB410A NDB410AE |
NDP410B NDP410BE NDB410B NDB410BE |
Units |
VDSS |
Drain-Source Voltage |
100 |
V | |
VDGR |
Drain-Gate Voltage (RGS < 1 M) |
100 |
V | |
VGSS |
Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) |
± 20 |
V | |
± 40 | ||||
ID |
Drain Current - Continuous - Pulsed |
9 |
8 |
A |
36 |
32 | |||
PD |
Total Power Dissipation Derate above 25°C |
50 |
W | |
0.33 |
W/ | |||
TJ,TSTG |
Operating and Storage Temperature Range |
-65 to 175 |
||
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
275 |