Position: Home  > All Categories> Integrated Circuits (ICs) > NDP708BE

NDP708BE

Features: ·60 and 54A, 80V. RDS(ON) = 0.022 and 0.025W.·Critical DC electrical parameters specified at elevated temperature.·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.·175°C maximum junction temperature rating.·High density cell desi...

product image

NDP708BE Picture
See larger image
SeekIC No. : 004433288 Detail

NDP708BE: Features: ·60 and 54A, 80V. RDS(ON) = 0.022 and 0.025W.·Critical DC electrical parameters specified at elevated temperature.·Rugged internal source-drain diode can eliminate the need for an external...

NDP708BE Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
NDP708BE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/27

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·60 and 54A, 80V. RDS(ON) = 0.022 and 0.025W.
·Critical DC electrical parameters specified at elevated temperature.
·Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
·175°C maximum junction temperature rating.
·High density cell design (3 million/in²) for extremely low RDS(ON).
·TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.


Pinout

Connection Diagram


Specifications

Symbol Parameter NDP708A NDP708AE
NDB708A NDB708AE		 NDP708B NDP708BE
NDB708B NDB708BE		 Units
VDSS
VDGR
VGSS

ID

PD

TJ,TSTG
TL		 Drain-Source Voltage
Drain-Gate Voltage (RGS < 1 M)
Gate-Source Voltage - Continuous
- Nonrepetitive (tP < 50 s)
Drain Current - Continuous
- Pulsed
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering
purposes, 1/8" from case for 5 seconds
80
80
±20
±40
V
V
V
V
A
A
W
W/°C
°C
°C
60
180
54
162
150
1
-65 to 175
275



Description

These N-channel enhancement mode power field effect transistors NDP708BE are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDP708BE is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Semiconductor Modules
2DI300A-050-03
7MBR25SA-120-50
RF and RFID
X3C26P1-30S
1P620S
Tapes, Adhesives
803
AC452-2
Optical Inspection Equipment
AA924
A21K4B
Undefined Category
VI-B63-IU
X27 589
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
View more