NDP7050L

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 50 V
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.015 Ohms


Features:

`75A, 50V, R<sub>DS(ON)</sub> = 0.015 @ V<sub>GS</sub> = 5V
`Low drive requirements allowing operation directly from logic drivers. V_GS(TH) < 2.0V.
`Critical DC electrical parameters specified at elevated temperature.
`Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
`175°C maximum junction temperature rating.
`High density cell design for extremely low R_DS(ON).
`TO-220 and TO-263 (D²PAK) package for both through hole and surface mount applications.

Specifications

Symbol	Parameter	NDP7050L	NDB7050L	Units
VDSS	Drain-Source Voltage	50		V
VDGR	Drain-Gate Voltage (RGS 1 M)	50		V
VGSS	Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 µs)	± 20		V
		± 40
ID	Drain Current - Continuous - Pulsed	75		A
		225
PD	Total Power Dissipation @ TC = 25°C Derate above 25°C	150		W
		1		W/
TJ,TSTG	Operating and Storage Temperature Range	-65 to 175

Description

These logic level N-Channel enhancement mode power field effect transistors NDP7050L are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. NDP7050L is particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Parameters:

Technical/Catalog Information	NDP7050L
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	50V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	15 mOhm @ 37.5A, 5V
Input Capacitance (Ciss) @ Vds	4000pF @ 25V
Power - Max	150W
Packaging	Tube
Gate Charge (Qg) @ Vgs	115nC @ 5V
Package / Case	TO-220
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	NDP7050L NDP7050L