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MTD10N10EL, MTD10N10ELT4, MTD10N10ELT4G

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Info of MTD10N10EL
Info of MTD10N10ELT4
Info of MTD10N10ELT4G

MTD10N10EL, MTD10N10ELT4, MTD10N10ELT4G Selling Leads, Datasheet

MFG:ON Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:. D/C:03+

MTD10N10EL, MTD10N10ELT4, MTD10N10ELT4G Datasheet download

Five Points

Part Number: MTD10N10ELT4

Category: Discrete Semiconductor Products

MFG: ON Semiconductor (VA)

Package Cooled: .

D/C: 03+

Description: MOSFET N-CH 100V 10A DPAK

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MTD10N10EL General Description

This advanced TMOS E?FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain?to?source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

MTD10N10EL Maximum Ratings

Rating	Symbol	Value	Unit
DraintoSource Voltage	V_DSS	100	Vdc
DraintoGate Voltage (R_GS = 1.0 M)	V_DGR	100	Vdc
GatetoSource Voltage - Continuous GatetoSource Voltage - Nonrepetitive (t_p 10 ms)	V_GS V_GSM	± 15 ± 20	Vdc Vpk
Drain Current - Continuous - Continuous @ 100°C - Single Pulse (t_p 10 s)	I_D I_D I_DM	10 6.0 35	Adc Apk
Total Power Dissipation @ 25°C Derate above 25°C Total Power Dissipation @ T_A = 25°C, when mounted to minimum recommended pad size	P_D	40 0.32 1.75	Watts W/°C Watts
Operating and Storage Temperature Range	T_J, T_stg	55 to 150	°C
Single Pulse DraintoSource Avalanche Energy - STARTING T_J = 25°C (V_DD = 25 Vdc, V_GS = 5.0 Vdc, PEAK I_L =10Apk, L = 1.0mH, R_G = 25)	E_AS	50	mJ
Thermal Resistance - Junction to Case - Junction to Ambient (Note 1) - Junction to Ambient (Note 2)	R_JC R_JA R_JA	3.13 100 71.4	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	T_L	260	°C

1. When surface mounted to an FR4 board using minimum recommended pad size.
2. When surface mounted to an FR4 board using 0.5 sq in pad size.

MTD10N10EL Features

• Avalanche Energy Specified
• Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature
• Surface Mount Package Available in 16 mm, 13−inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number

MTD10N10ELT4 Parameters

Technical/Catalog Information	MTD10N10ELT4
Vendor	ON Semiconductor (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	10A
Rds On (Max) @ Id, Vgs	220 mOhm @ 5A, 5V
Input Capacitance (Ciss) @ Vds	1040pF @ 25V
Power - Max	1.75W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	15nC @ 5V
Package / Case	DPak, SC-63, TO-252 (2 leads+tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	MTD10N10ELT4 MTD10N10ELT4 MTD10N10ELT4OSDKR ND MTD10N10ELT4OSDKRND MTD10N10ELT4OSDKR

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