MTD1121F, MTD12N06EZL, MTD1302 Selling Leads, Datasheet
MFG:SHI Package Cooled:SOP D/C:00+
MTD1121F, MTD12N06EZL, MTD1302 Datasheet download
Part Number: MTD1121F
MFG: SHI
Package Cooled: SOP
D/C: 00+
MTD1121F, MTD12N06EZL, MTD1302
- Table of contents:
Info of MTD1121F
Info of MTD12N06EZL
Info of MTD1302
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About MTD10N05E
PDF/DataSheet Download
Datasheet: MTD10N05E
File Size: 214905 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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About MTD12N06EZL
PDF/DataSheet Download
Datasheet: MTD12N06EZL
File Size: 36866 KB
Manufacturer: ON SEMICONDUCTOR
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About MTD1302
PDF/DataSheet Download
Datasheet: MTD1302
File Size: 210333 KB
Manufacturer: MOTOROLA [Motorola, Inc]
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MTD12N06EZL General Description
This advanced TMOS power FET is designed to withstand high energy in the avalanche and mode and switch efficiently. This new high energy device also offers a gatetosource zener diode designed for 4 kV ESD protection (human body model).
• ESD Protected
• 4 kV Human Body Model
• 400 V Machine Model
• Avalanche Energy Capability
• Internal SourceToDrain Diode Designed to Replace External Zener Transient SuppressorAbsorbs High Energy in the Avalanche Mode
MTD12N06EZL Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| DrainSource Voltage |
VGSS |
60 |
Vdc |
| DrainGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
| GateSource Voltage - Continuous - NonRepetitive (tp±50ms) |
VGS VGSM |
±15 ±20 |
|
| Drain - Continuous - Continuous @ 100°C - Single Pulse (tp10 s) |
ID ID IDM |
12 7.1 36 |
Adc Apk |
| Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size |
PD |
45 0.36 1.75 |
Watts W/°C Watts |
| Operating and Storage Temperature Range |
TJ,Tstg |
55 to 150 |
°C |
| Single DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 12 Apk, L = 1.0 mH, RG = 25) |
EAS |
72 |
mJ |
| Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient - JunctiontoAmbient(1) |
RJC RJA RJA |
2.78 100 71.4 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 seconds |
TL |
260 |
°C |
MTD1302 General Description
This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
MTD1302 Maximum Ratings
| Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
30 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
30 |
Vdc |
| GatetoSource Voltage - Continuous GatetoSource Voltage - Nonrepetitive (tp 10 ms) |
VGS VGSM |
± 20 ± 20 |
Vdc Vpk |
| Drain Current - Continuous - Continuous @ 100°C - Single Pulse (tp 10 s) |
ID ID IDM |
20 16 60 |
Adc Apk |
| Total Power Dissipation Derate above 25°C Total Power Dissipation @ 25°C(1) |
PD |
74 0.592 1.75 |
Watts W/°C Watts |
| Operating and Storage Temperature Range |
TJ, Tstg |
55 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy - STARTING TJ = 25°C (VDD = 25 Vdc, VGS = 10Vdc, PEAK IL =2.0Apk, L = 1.0mH, RG = 25) |
EAS |
200 |
mJ |
| Thermal Resistance - Junction to Case - Junction to Ambient - Junction to Ambient(1) |
RJC RJA RJA |
1.67 100 71.4 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
This document contains information on a new product. Specifications and information herein are subject to change without notice.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
MTD1302 Features
• Avalanche Energy Specified
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode Is Characterized for Use In Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Surface Mount Package Available in 16 mm, 13, / 2500 Unit Tape & Reel, Add "T4" Suffix to Part Number
• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode Is Characterized for Use In Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Surface Mount Package Available in 16 mm, 13, / 2500 Unit Tape & Reel, Add "T4" Suffix to Part Number
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