MSC0912-200, MSC1000M, MSC1000MP Selling Leads, Datasheet
MFG:ASI D/C:07+
MSC0912-200, MSC1000M, MSC1000MP Datasheet download
Part Number: MSC0912-200
MFG: ASI
Package Cooled:
D/C: 07+
MFG:ASI D/C:07+
MSC0912-200, MSC1000M, MSC1000MP Datasheet download
MFG: ASI
Package Cooled:
D/C: 07+
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PDF/DataSheet Download
Datasheet: MSC1000-029
File Size: 198202 KB
Manufacturer: ETC [ETC]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MSC1000M
File Size: 102975 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MSC1000MP
File Size: 101233 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
The MSC1000M is a Class A, common emitter transistor with an emitter ballasted Matrix geometry specifically designed for DME/IFF driver applications.
This device is capable of withstanding a :1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi-automatic
wire bonding techniques ensure high reliability and product consistency.
The MSC1000M is housed in the IMPAC™ package with internal input matching.
Symbol |
Parameter |
Value |
Unit |
PDISS |
Power Dissipation* (See Safe Area) |
-- |
W |
IC |
Device Current* |
300 |
mA |
VCE |
Collector-Emitter Bias Voltage* |
20 |
V |
TJ |
Junction Temperature (Pulsed RF Operation) |
200 |
°C |
TSTG |
Storage Temperature |
- 65 to +150 |
°C |
`RUGGEDIZED VSWR:1
`INPUT MATCHING
`LOW THERMAL RESISTANCE
`CLASS A OPERATION
`POUT = 0.6 W MIN. WITH 10.8 dB GAIN
The MSC1000MP is a Class A, common emitter transistor with an emitter ballasted Matrix geometry specifically designed for DME/IFF driver applications.
This device is capable of withstanding a ¥:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi-automatic
wire bonding techniques ensure high reliability and product consistency.
The MSC1000MP is housed in the IMPAC™ package with internal input matching.
Symbol |
Parameter |
Value |
Unit |
PDISS |
Power Dissipation* (See Safe Area) |
-- |
W |
IC |
Device Current* |
300 |
mA |
VCE |
Collector-Emitter Bias Voltage* |
20 |
V |
TJ |
Junction Temperature (Pulsed RF Operation) |
200 |
°C |
TSTG |
Storage Temperature |
- 65 to +150 |
°C |
`RUGGEDIZED VSWR :1
`INPUT MATCHING
`LOW THERMAL RESISTANCE
`CLASS A OPERATION
`POUT = 0.6 W MIN WITH 10.8 dB GAIN