MSC1000M Selling Leads, Price trend, MSC1000M DataSheet download, circuit diagram from SeekIC.com

Features: `RUGGEDIZED VSWR:1 `INPUT MATCHING`LOW THERMAL RESISTANCE `CLASS A OPERATION `POUT = 0.6 W MIN. WITH 10.8 dB GAINSpecifications Symbol Parameter Value Unit PDISS Power Dissipation* (See Safe Area) -- W IC Device Current* 300 mA VCE Collector-Em...

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SeekIC No. : 004427805 Detail

MSC1000M: Features: `RUGGEDIZED VSWR:1 `INPUT MATCHING`LOW THERMAL RESISTANCE `CLASS A OPERATION `POUT = 0.6 W MIN. WITH 10.8 dB GAINSpecifications Symbol Parameter Value Unit PDISS Power ...

MSC1000M Data Sheet

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Part Number:: MSC1000M
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/21

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MSC1000-029 evaluate
Features: ·Each channel is independently programmable via DASM software.·Factory set input filters...
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Features: `RUGGEDIZED VSWR :1 `INPUT MATCHING `LOW THERMAL RESISTANCE `CLASS A OPERATION `POUT = ...
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Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C...

Product Details

Description

Features:

`RUGGEDIZED VSWR:1
`INPUT MATCHING
`LOW THERMAL RESISTANCE
`CLASS A OPERATION
`POUT = 0.6 W MIN. WITH 10.8 dB GAIN

Specifications

Symbol	Parameter	Value	Unit
P_DISS	Power Dissipation* (See Safe Area)	--	W
I_C	Device Current*	300	mA
V_CE	Collector-Emitter Bias Voltage*	20	V
T_J	Junction Temperature (Pulsed RF Operation)	200	°C
T_STG	Storage Temperature	- 65 to +150	°C

Description

The MSC1000M is a Class A, common emitter transistor with an emitter ballasted Matrix geometry specifically designed for DME/IFF driver applications.

MSC1000M is capable of withstanding a :1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and semi-automatic
wire bonding techniques ensure high reliability and product consistency.

The MSC1000M is housed in the IMPAC™ package with internal input matching.

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MSC1000M

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