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MSC1004M

Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 18 W IC Device Current* 650 mA VCC Collector-Supply Voltage* 32 V TJ Junction Temperature 200 °C TSTG Storage Temperature -65 to +150 °CDescript...

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MSC1004M: Specifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 18 W IC Device Current* 650 mA VCC Collector-Supply Voltage* 32 V ...

MSC1004M Data Sheet

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Part Number:
MSC1004M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Specifications

Symbol
 Parameter
Value
Unit
PDISS
 Power Dissipation* (TC 100°C)
18
W
IC
 Device Current*
650
mA
VCC
 Collector-Supply Voltage*
32
V
TJ
 Junction Temperature
200
°C
TSTG
 Storage Temperature
-65 to +150
°C



Description

The MSC1004M is a low-level Class C pulsed transistor specifically designed for DME/IFF driver or output applications.

These devices MSC1004M are capable of withstanding a 8:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and automatic bonding techniques ensure high reliability and product consistency.

The MSC1004M is housed in the IMPACTM package with internal input matching.




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