Features: `1025 - 1150 MHz `RUGGEDIZED VSWR :1`INTERNAL INPUT MATCHING`LOW THERMAL RESISTANCE` POUT = 4.0 W MIN WITH 9.0 dB GAINSpecifications Symbol Parameter Value Unit PDISS Power Dissipation* (TC 100°C) 18 W IC Device Current* 650 mA VCC Collector-Su...
MSC1004MP: Features: `1025 - 1150 MHz `RUGGEDIZED VSWR :1`INTERNAL INPUT MATCHING`LOW THERMAL RESISTANCE` POUT = 4.0 W MIN WITH 9.0 dB GAINSpecifications Symbol Parameter Value Unit PDISS P...
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Features: ·Each channel is independently programmable via DASM software.·Factory set input filters...
`1025 - 1150 MHz
`RUGGEDIZED VSWR :1
`INTERNAL INPUT MATCHING
`LOW THERMAL RESISTANCE
` POUT = 4.0 W MIN WITH 9.0 dB GAIN
Symbol |
Parameter |
Value |
Unit |
PDISS |
Power Dissipation* (TC 100°C) |
18 |
W |
IC |
Device Current* |
650 |
mA |
VCC |
Collector-Supply Voltage* |
32 |
V |
TJ |
Junction Temperature |
200 |
°C |
TSTG |
Storage Temperature |
-65 to +150 |
°C |
The MSC1004MP is a low-level Class C pulsed transistor specifically designed for DME/IFF driver or output applications.
These devices MSC1004MP are capable of withstanding a 8:1 load VSWR at any phase angle under full rated conditions. Low RF thermal resistance and automatic
bonding techniques ensure high reliability and product consistency.
The MSC1004MP is housed in the IMPACTM package with internal input matching.