MFG:ON Semiconductor (VA) Category:Discrete Semiconductor Products Package Cooled:www.dayue-hk.com D/C:09+ ROHS
MMFT2N02ELT1, MMFT2N25E, MMFT2N25ET1 Datasheet download
Category: Discrete Semiconductor Products
MFG: ON Semiconductor (VA)
Package Cooled: www.dayue-hk.com
D/C: 09+ ROHS
Description: MOSFET N-CH 20V 1.6A SOT223
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PDF/DataSheet Download
Datasheet: MMFR-29C516E-31SB
File Size: 96974 KB
Manufacturer: ATMEL [ATMEL Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MMFT2N25E
File Size: 142719 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: MMFR-29C516E-31SB
File Size: 96974 KB
Manufacturer: ATMEL [ATMEL Corporation]
Download : Click here to Download
| Technical/Catalog Information | MMFT2N02ELT1 |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 1.6A |
| Rds On (Max) @ Id, Vgs | 150 mOhm @ 800mA, 5V |
| Input Capacitance (Ciss) @ Vds | 580pF @ 15V |
| Power - Max | 800mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 20nC @ 5V |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | MMFT2N02ELT1 MMFT2N02ELT1 MMFT2N02ELT1OSDKR ND MMFT2N02ELT1OSDKRND MMFT2N02ELT1OSDKR |
This advanced high voltage TMOS E-FET is designed t withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source dio with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
|
Rating |
Symbol |
Value |
Unit |
| Drain-to-Source Volta |
VDSS |
250 |
Vdc |
| Drain-to-Gate Voltage, ( RGS = 1.0 m ) |
VDGR |
250 |
Vdc |
| Gate-to-Source Voltage - Continu |
VGS |
20 |
Vdc |
| Gate-to-Source Voltage - Single Pulse (tp 50 S) |
VGSM |
40 |
Vdc |
| Drain Current - Continuous @TC = 25C Drain Current - Continuous @TC = 100C Drain Current - Single Pulse (tp 10 S) |
ID |
2.0 |
Adc |
| Total Power Dissipation @ TC = 25 Derate above 25 Total PD @ TA = 25 mounted on 1" Sq. Drain Pad on FR-4 Bd. Materia Total PD @ TA = 25 mounted on 0.7" Sq. Drain Pad on FR-4 Bd. Materia Total PD @ TA = 25 mounted on min. Drain Pad on FR-4 Bd. Materia |
PD |
0.77 |
Watts |
| Operating and Storage Temperature Range |
TJ ,Tstg |
-55 to 150 |
· Avalanche Energy Capability Specified at Elevated Temperature
· Internal Source-to-Drain Diode Designed to Replace Extern Zener Transient Suppressor - Absorbs High Energy in th Avalanche Mode
· Source-to-Drain Diode Recovery Time Comparable Discrete Fast Recovery Diode
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