MMFT1N10

` Silicon Gate for Fast Switching Speeds
` Low R_DS(on) - 0.25 max
` The SOT-C223 Package can be Soldered Using Wave or Re-flow. The Formed Leads Absorb Thermal Stress During Sol-dering, Eliminating the Possibility of Damage to the Die
` Available in 12 mm Tape and Reel
    Use MMFT1N10ET1 to order the 7 inch/1000 unit reel.
    Use MMFT1N10ET3 to order the 13 inch/4000 unit reel.

This advanced MMFT1N10 E-CFT is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commuta-tion modes. This new energy efficient device also offers a drain-Cto-Csour diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies dc-Cd converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additiona safety margin against unexpected voltage transients. The MMFT1N10 is housed in the SOT-C223 package which is designed for mediu power surface mount applications.