MMFT108T1, MMFT1N10E, MMFT1N10ET Selling Leads, Datasheet
MFG:ON Package Cooled:SOT-223 D/C:2006
MMFT108T1, MMFT1N10E, MMFT1N10ET Datasheet download
Part Number: MMFT108T1
MFG: ON
Package Cooled: SOT-223
D/C: 2006
MMFT108T1, MMFT1N10E, MMFT1N10ET
- Table of contents:
Info of MMFT108T1
Info of MMFT1N10E
Info of MMFT1N10ET
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About MMFT108T1
PDF/DataSheet Download
Datasheet: MMFT108T1
File Size: 93323 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MMFT1N10E
PDF/DataSheet Download
Datasheet: MMFT1N10E
File Size: 242079 KB
Manufacturer: MOTOROLA [Motorola, Inc]
Download : Click here to Download
About MMFR-29C516E-31SB
PDF/DataSheet Download
Datasheet: MMFR-29C516E-31SB
File Size: 96974 KB
Manufacturer: ATMEL [ATMEL Corporation]
Download : Click here to Download
MMFT108T1 Maximum Ratings
|
Rating |
Symbol |
Value |
Unit |
| Drain-to-Source Volta |
VDSS |
200 |
Volts |
| Gate-to-Source Voltage - Continu |
VGS |
20 |
Volts |
| Drain Current - Continuou |
ID |
250 |
mAdc |
| Total Power Dissipation @ TA = 25 Derate above 25 |
PD |
0.8 |
Watts |
| Operating and Storage Temperature Range |
TJ , Tstg |
-65 to +150 |
MMFT1N10E General Description
This advanced EFET is a TMOS Medium Power MOSFET designed to withstand high energy in the avalanche and commutation modes. This new energy efficient device also offers a draintosource diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies,dcdc converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. The device is housed in the SOT223 package which is designed for medium power surface mount applications.
• Silicon Gate for Fast Switching Speeds
• Low RDS(on) - 0.25 max
• The SOT223 Package can be Soldered Using Wave or Reflow.
The Formed Leads Absorb Thermal Stress During Soldering,Eliminating the Possibility of Damage to the Die
• Available in 12 mm Tape and Reel
Use MMFT1N10ET1 to order the 7 inch/1000 unit reel.
Use MMFT1N10ET3 to order the 13 inch/4000 unit reel.
MMFT1N10E Maximum Ratings
|
Rating |
Symbol |
Value |
Units |
| DraintoSource Voltage |
VDS |
100 |
V |
| GatetoSource Voltage - Continuous |
VGS |
±20 |
V |
| Drain Current - Continuous Drain Current - Pulsed |
ID IDM |
1 4 |
Adc |
| Total Power Dissipation @ TA = 25°C Derate above 25°C |
PD(1) |
0.8 6.4 |
W mW/°C |
| Operating and Storage Temperature Range |
TJ,Tstg |
65 to 150 |
°C |
| Single Pulse DraintoSource Avalanche Energy - Starting TJ = 25°C (VDD = 60 V, VGS = 10 V, Peak IL= 1 A, L = 0.2 mH, RG = 25 ) |
EAS |
168 |
mJ |
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