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This Power MOSFET is designed for high speed, low loss power switching applications such as switching regulators, dc-Cdc converters solenoid and relay drivers. The device is housed in the SOT-C22 package which is designed for medium power surface mount applications.
MMFT107T1 Maximum Ratings
Rating
Symbol
Value
Unit
Drain-to-Source Volta
VDSS
200
Volts
Gate-to-Source Voltage - Non -Repeti
VGS
20
Volts
Drain Current
ID
250
mAdc
Total Power Dissipation @ TA = 25 (Note 1.) Derate above 25
PD
0.8 6.4
Watts mW/
Operating and Storage Temperature Range
TJ ,Tstg
-65 to 150
MMFT107T1 Features
· Silicon Gate for Fast Switching Speeds · Low Drive Requirement · The SOT-C223 Package can be soldered using wave or reflow The formed leads absorb thermal stress during soldering eliminating the possibility of damage to the die.