Features: ` Silicon Gate for Fast Switching Speeds` High Voltage - 240 Vdc` Low Drive Requirement` The SOT-223 Package can be soldered using wave or reflow The formed leads absorb thermal stress during soldering,eliminating the possibility of damage to the die.` Available in 12 mm Tape and Reel Us...
MMFT2406T: Features: ` Silicon Gate for Fast Switching Speeds` High Voltage - 240 Vdc` Low Drive Requirement` The SOT-223 Package can be soldered using wave or reflow The formed leads absorb thermal stress dur...
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` Silicon Gate for Fast Switching Speeds
` High Voltage - 240 Vdc
` Low Drive Requirement
` The SOT-223 Package can be soldered using wave or reflow The formed leads absorb thermal stress during soldering,eliminating the possibility of damage to the die.
` Available in 12 mm Tape and Reel
Use MMFT2406T1 to order the 7 inch/1000 unit reel.
Use MMFT2406T3 to order the 13 inch/4000 unit reel.
Rating |
Symbol |
Value |
Unit |
Drain-to-Source Volta |
VDSS |
240 |
Volts |
Gate-to-Source Voltage - Non -Repeti |
VGS |
±20 |
Volts |
Drain Current |
ID |
700 |
mAdc |
Total Power Dissipation @ TA = 25(1) Derate above 25 |
PD |
1.5 |
Watts |
Operating and Storage Temperature Range |
TJ ,Tstg |
-65 to 150 |
This MMFT2406T TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. The device is housed in the SOT-223 package which is designed fo medium power surface mount applications.