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This advanced E-FET is a TMOS medium power MOSFE designed to withstand high energy in the avalanche and commuta-tion modes. This new energy efficient device also offers a drain-to-source diode with a fast recovery time. Designed for l voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. The device is housed in the SOT-223 package which is designed for medium power surfac mount applications.
MMFT2955E Maximum Ratings
Rating
Symbol
Value
Unit
Drain-Cto-CSource Volta
VDS
60
Vdc
Gate-Cto-CSource Voltage - Continu
VGS
±15
Drain Current - Continuou Drain Current - Pulse
ID IDM
1.2 4.8
Adc
Total Power Dissipation @ TA = 25 Derate above 25
PD(1)
0.8 6.4
Watts mW/
Operating and Storage Temperature Range
TJ , Tstg
-65 to 150
Single Pulse Drain-Cto-CSource Avalanche Energy - Startin TJ= 25
(VDD = 60 V, VGS = 10 V, Peak IL = 1.7 A, L = 0.2 mH, RG = 25 )
EAS
108
mJ
MMFT2955E Features
` Silicon Gate for Fast Switching Speeds ` Low RDS(on) -0.3 max ` The SOT-223 Package can be Soldered Using Wave or Re-flow. The Formed Leads Absorb Thermal Stress During Sol-dering, Eliminating the Possibility of Damage to the Die ` Available in 12 mm Tape and Reel Use MMFT2955ET1 to order the 7 inch/1000 unit reel. Use MMFT2955ET3 to order the 13 inch/4000 unit reel.