MIE-334A4, MIE-334H4, MIE-334L3 Selling Leads, Datasheet
D/C:07+
MIE-334A4, MIE-334H4, MIE-334L3 Datasheet download
Part Number: MIE-334A4
MFG: --
Package Cooled:
D/C: 07+
MIE-334A4, MIE-334H4, MIE-334L3
- Table of contents:
Info of MIE-334A4
Info of MIE-334H4
Info of MIE-334L3
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About MIE-334A4
PDF/DataSheet Download
Datasheet: MIE-334A4
File Size: 33133 KB
Manufacturer: UOT [Unity Opto Technology]
Download : Click here to Download
About MIE-334H4
PDF/DataSheet Download
Datasheet: MIE-334H4
File Size: 32442 KB
Manufacturer: UOT [Unity Opto Technology]
Download : Click here to Download
About MIE-334L3
PDF/DataSheet Download
Datasheet: MIE-334L3
File Size: 33138 KB
Manufacturer: UOT [Unity Opto Technology]
Download : Click here to Download
MIE-334A4 General Description
The MIE-334A4 is an infrared emitting diode utilizing GaAs with AlGaAs window coating chip technology. It is molded in water clear plastic package.
MIE-334A4 Maximum Ratings
|
Parameter |
Maximum Rating |
Unit |
| Power Dissipation |
120 |
mW |
| Peak Forward Current(300pps,10ms pulse) |
1 |
A |
| Continuos Forward Current | 100 |
mA |
| Reverse Voltage | 5 |
V |
| Operating Temperature Range |
-55oC to +100oC | |
| Storage Temperature Range |
-55oC to +100oC | |
| Lead Soldering Temperature |
260oC for 5 seconds | |
MIE-334A4 Features
` High radiant power and high radiant intensity
` Suitable for DC and high pulse current operation
` Standard T-1 ( 3mm ) package
` Peak wavelength p = 940 nm
` Good spectral matching to si-photodetector
` Radiant angle : ±15°
` Suitable for DC and high pulse current operation
` Standard T-1 ( 3mm ) package
` Peak wavelength p = 940 nm
` Good spectral matching to si-photodetector
` Radiant angle : ±15°
MIE-334H4 General Description
The MIE-334H4 is a GaAlAs infrared LED having a peak wavelength at 850nm. It features ultra-high power, high response speed and molded package with higher radiant intensity. In addition to improving the S/N ratio in applied optical systems, the MIE-334H4 has greatly improved long-distance characteristics as well as significantly increased its range of applicability .
MIE-334H4 Maximum Ratings
|
Parameter |
Maximum Rating |
Unit |
| Power Dissipation |
120 |
mW |
| Peak Forward Current(300pps,10ms pulse) |
1 |
A |
| Continuos Forward Current | 100 |
mA |
| Reverse Voltage | 5 |
V |
| Operating Temperature Range |
-55oC to +100oC | |
| Storage Temperature Range |
-55oC to +100oC | |
| Lead Soldering Temperature |
260oC for 5 seconds | |
MIE-334H4 Features
` Ultra-High radiant intensity
` High response speed
` Standard T-1 ( 3mm) package, radiant angle : 30°
` Peak wavelength P =850 nm
` Good spectral matching to si-photodetector
` High response speed
` Standard T-1 ( 3mm) package, radiant angle : 30°
` Peak wavelength P =850 nm
` Good spectral matching to si-photodetector
MIE-334H4 Typical Application
· Data communication
· SIR
· SIR
MIE-334L3 General Description
The MIE-334L3 is an infrared emitting diode in GaAlAs on GaAlAs technology molded in water clear plastic package.
MIE-334L3 Maximum Ratings
|
Parameter |
Maximum Rating |
Unit |
| Power Dissipation |
120 |
mW |
| Peak Forward Current(300pps,10ms pulse) |
1 |
A |
| Continuos Forward Current | 100 |
mA |
| Reverse Voltage | 5 |
V |
| Operating Temperature Range |
-55oC to +100oC | |
| Storage Temperature Range |
-55oC to +100oC | |
| Lead Soldering Temperature |
260oC for 5 seconds | |
MIE-334L3 Features
` High power and high radiant intensity
` Suitable for DC and high pulse current operation
` Standard T-1 ( 3mm ) package
` Peak wavelength p = 880 nm
` Good spectral matching to si-photodetector
` Suitable for DC and high pulse current operation
` Standard T-1 ( 3mm ) package
` Peak wavelength p = 880 nm
` Good spectral matching to si-photodetector
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